Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

A parameter study on high-rate deposition of silicon nitride Paper

Moschner, J.D.
Metz, A.
Hezel, R.
Institut fuer Solarenergieforschung GmbH Hameln/Emmerthal, Emmerthal (Germany)

January 2002

Different systems for the deposition of silicon nitride (SiN) as a passivating antireflection coatin...

Application and analysis of silicon nitride films for surface passivation of high efficiency silicon solar cells

Lamers, M.W.P.E.

January 2015

Two solar cell types are discussed in this thesis. Firstly, the Metal Wrap-Through cell, where the e...

Structural film characteristics related to the passivation properties of high-rate (> 0.5 nm/s) plasma deposited a-SiNx:H

Hong, J.
Kessels, W. M.M.
Soppe, W. J.
Rieffe, H. C.
Weeber, A. W.
van ve Sanden, M. C.M.

December 2003

This paper addresses the effects of a short high-temperature step, corresponding to the firing of th...

Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

Hong, J.
Kessels, W.M.M.
Assche, van, F.J.H.
Rieffe, H.C.
Soppe, W.J.
Weeber, A.W.
Sanden, van de, M.C.M.

January 2003

Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s...

Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

Hoex, B.
van Erven, A.J.M.
Bosch, R.C.M.
Stals, W.T.M.
Bijker, M.D.
Oever, van den, P.J.
Kessels, W.M.M.
Sanden, van de, M.C.M.

January 2005

High-quality surface and bulk passivation of crystalline silicon solar cells has been obtained under...

High-rate (> 1 nm/s) plasma deposited a-SiNX:H films for mc-Si solar cell application

Hong, J.
Kessels, W.M.M.
Assche, van, F.J.H.
Bik, W.M.A.
Rieffe, H.C.
Soppe, W.J.
Weeber, A.W.
Sanden, van de, M.C.M.

January 2002

We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...

Influence of the high-temperature firing step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells

Hong, JG
Kessels, WMM Erwin
Soppe, Wim J
Weeber, Arthur
ArnoldBik, WM Wim
Sanden, MCM Richard van de

January 2003

The influence of a short high-temperature step, comparable to the so-called firing of the metalliz...

High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma

Kessels, W.M.M.
Hong, J.
Assche, van, F.J.H.
Moschner, J.D.
Lauinger, T.
Soppe, W.J.
Weeber, A.W.
Schram, D.C.
Sanden, van de, M.C.M.

January 2002

Driven by the need for improvement of the economical competitiveness of photovoltaic energy, the fea...

Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells

Hong, J.
Kessels, W.M.M.
Soppe, W.J.
Weeber, A.W.
ArnoldBik, W.M.
Sanden, van de, M.C.M.

January 2003

The influence of a short high-temperature step, comparable to the so-called "firing" of the metalliz...

High-rate (> 1 nm/s) plasma deposited a-SiNx:H films for mc-Si solar cell application

Hong, J.
Kessels, W. M.M.
Van Assche, F. J.H.
Bik, W. M.A.
Rieffe, H. C.
Soppe, W. J.
Weeber, A. W.
Van De Sanden, M. C.M.

December 2002

We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...

High-rate deposition of a-SiNx:H films for photovoltaic applications

Kessels, W. M.M.
Van Assche, F. J.H.
Hong, J.
Moschner, J. D.
Lauinger, T.
Schram, D. C.
Van de Sanden, M. C.M.
Stutzmann, M.
Boyce, J.B.
Cohen, J.D.
et al., xx

December 2001

The feasibility of the new 'Expanding Thermal Plasma' technique for the deposition of a-SiNx:H at hi...

Deposition of device quality silicon nitride with ultra high deposition rate (> 7 nm/s) using hot-wire CVD

Verlaan, V.
Houweling, Z.S.
van der Werf, C.H.M.
Romijn, I.G.
Schropp, R.E.I.
Goldbach, H.D.
Surfaces, Interfaces and Devices
Dep Natuurkunde
Afd Nanophotonics

January 2008

The application of hot-wire (HW) CVD deposited silicon nitride (SiNx) as passivating anti-reflection...

A parameter study on high-rate deposition of silicon nitride Paper

Moschner, J.D.
Metz, A.
Hezel, R.
Institut fuer Solarenergieforschung GmbH Hameln/Emmerthal, Emmerthal (Germany)

January 2002

Different systems for the deposition of silicon nitride (SiN) as a passivating antireflection coatin...

Application and analysis of silicon nitride films for surface passivation of high efficiency silicon solar cells

Lamers, M.W.P.E.

January 2015

Two solar cell types are discussed in this thesis. Firstly, the Metal Wrap-Through cell, where the e...

Structural film characteristics related to the passivation properties of high-rate (> 0.5 nm/s) plasma deposited a-SiNx:H

Hong, J.
Kessels, W. M.M.
Soppe, W. J.
Rieffe, H. C.
Weeber, A. W.
van ve Sanden, M. C.M.

December 2003

This paper addresses the effects of a short high-temperature step, corresponding to the firing of th...

Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

Hong, J.
Kessels, W.M.M.
Assche, van, F.J.H.
Rieffe, H.C.
Soppe, W.J.
Weeber, A.W.
Sanden, van de, M.C.M.

January 2003

Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s...

Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

Hoex, B.
van Erven, A.J.M.
Bosch, R.C.M.
Stals, W.T.M.
Bijker, M.D.
Oever, van den, P.J.
Kessels, W.M.M.
Sanden, van de, M.C.M.

January 2005

High-quality surface and bulk passivation of crystalline silicon solar cells has been obtained under...

High-rate (> 1 nm/s) plasma deposited a-SiNX:H films for mc-Si solar cell application

Hong, J.
Kessels, W.M.M.
Assche, van, F.J.H.
Bik, W.M.A.
Rieffe, H.C.
Soppe, W.J.
Weeber, A.W.
Sanden, van de, M.C.M.

January 2002

We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...

Influence of the high-temperature firing step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells

Hong, JG
Kessels, WMM Erwin
Soppe, Wim J
Weeber, Arthur
ArnoldBik, WM Wim
Sanden, MCM Richard van de

January 2003

The influence of a short high-temperature step, comparable to the so-called firing of the metalliz...

High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma

Kessels, W.M.M.
Hong, J.
Assche, van, F.J.H.
Moschner, J.D.
Lauinger, T.
Soppe, W.J.
Weeber, A.W.
Schram, D.C.
Sanden, van de, M.C.M.

January 2002

Driven by the need for improvement of the economical competitiveness of photovoltaic energy, the fea...

Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells

Hong, J.
Kessels, W.M.M.
Soppe, W.J.
Weeber, A.W.
ArnoldBik, W.M.
Sanden, van de, M.C.M.

January 2003

The influence of a short high-temperature step, comparable to the so-called "firing" of the metalliz...

High-rate (> 1 nm/s) plasma deposited a-SiNx:H films for mc-Si solar cell application

Hong, J.
Kessels, W. M.M.
Van Assche, F. J.H.
Bik, W. M.A.
Rieffe, H. C.
Soppe, W. J.
Weeber, A. W.
Van De Sanden, M. C.M.

December 2002

We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...

High-rate deposition of a-SiNx:H films for photovoltaic applications

Kessels, W. M.M.
Van Assche, F. J.H.
Hong, J.
Moschner, J. D.
Lauinger, T.
Schram, D. C.
Van de Sanden, M. C.M.
Stutzmann, M.
Boyce, J.B.
Cohen, J.D.
et al., xx

December 2001

The feasibility of the new 'Expanding Thermal Plasma' technique for the deposition of a-SiNx:H at hi...

Deposition of device quality silicon nitride with ultra high deposition rate (> 7 nm/s) using hot-wire CVD

Verlaan, V.
Houweling, Z.S.
van der Werf, C.H.M.
Romijn, I.G.
Schropp, R.E.I.
Goldbach, H.D.
Surfaces, Interfaces and Devices
Dep Natuurkunde
Afd Nanophotonics

January 2008

The application of hot-wire (HW) CVD deposited silicon nitride (SiNx) as passivating anti-reflection...

A parameter study on high-rate deposition of silicon nitride Paper

Moschner, J.D.
Metz, A.
Hezel, R.
Institut fuer Solarenergieforschung GmbH Hameln/Emmerthal, Emmerthal (Germany)

January 2002

Different systems for the deposition of silicon nitride (SiN) as a passivating antireflection coatin...

Application and analysis of silicon nitride films for surface passivation of high efficiency silicon solar cells

Lamers, M.W.P.E.

January 2015

Two solar cell types are discussed in this thesis. Firstly, the Metal Wrap-Through cell, where the e...

Structural film characteristics related to the passivation properties of high-rate (> 0.5 nm/s) plasma deposited a-SiNx:H

Hong, J.
Kessels, W. M.M.
Soppe, W. J.
Rieffe, H. C.
Weeber, A. W.
van ve Sanden, M. C.M.

December 2003

This paper addresses the effects of a short high-temperature step, corresponding to the firing of th...

Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

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Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

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Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (&gt;1 nm/s) silicon nitride films

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Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (&gt;1 nm/s) silicon nitride films

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Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films