Add to ORKGWe have investigated the structural properties of as-grown and annealed (750 and 800 degrees C) digital alloy InGaAlAs ( lambda =1.3 mu m) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750 degrees C annealed sample. The 800 degrees C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750 degrees C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750 degrees C annealed samples was the same. Annealing at 800 degrees C showed large barrier/well interface roughness and lateral composition modulation due to the phase sep...
In this study the microstructures of laser treated ultra pure Al and two Al-Si alloys (Al-0.4 Si and...
We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing....
We have studied the effect of annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs l...
We have investigated the structural properties of as-grown and annealed (750 and 800 degrees C) digi...
We have studied digital alloy InAlAs/InGaAs quantum well and quantum cascade laser structures with c...
A proper design of the active layers and injector layers is a vital step in producing sophisticated ...
We have studied an InGaAs/InAlAs quantum cascade laser structure with cross-sectional scanning tunne...
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion o...
The surface reconstructions of InxGa1-xAs alloys grown by molecular beam epitaxy on the (001) surfac...
An atomic scale study has been performed to understand the influence of the (As,Sb) shutter sequence...
Laser annealing (LA) is an emerging technique that has the potential to be incorporated into the dev...
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion o...
In this study the microstructures of laser treated ultra pure Al and two Al-Si alloys (Al-0.4 Si and...
In this study the microstructures of laser treated ultra pure Al and two Al-Si alloys (Al-0.4 Si and...
We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing....
We have studied the effect of annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs l...
We have investigated the structural properties of as-grown and annealed (750 and 800 degrees C) digi...
We have studied digital alloy InAlAs/InGaAs quantum well and quantum cascade laser structures with c...
A proper design of the active layers and injector layers is a vital step in producing sophisticated ...
We have studied an InGaAs/InAlAs quantum cascade laser structure with cross-sectional scanning tunne...
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion o...
The surface reconstructions of InxGa1-xAs alloys grown by molecular beam epitaxy on the (001) surfac...
An atomic scale study has been performed to understand the influence of the (As,Sb) shutter sequence...
Laser annealing (LA) is an emerging technique that has the potential to be incorporated into the dev...
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion o...
In this study the microstructures of laser treated ultra pure Al and two Al-Si alloys (Al-0.4 Si and...
In this study the microstructures of laser treated ultra pure Al and two Al-Si alloys (Al-0.4 Si and...
We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing....
We have studied the effect of annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs l...