The methane concentration dependence of the plasma gas phase on surface morphology and boron incorporation in single crystal, boron-doped diamond deposition is experimentally and computationally investigated. Starting at 1%, an increase of the methane concentration results in an observable increase of the B-doping level up to 1.7 x 10(21) cm(-3), while the hole Hall carrier mobility decreases to 0.7 +/- 0.2 cm(2) V-1 s(-1). For B-doped SCD films grown at 1%, 2%, and 3% [CH4]/[H-2], the electrical conductivity and mobility show no temperature-dependent behavior due to the metallic-like conduction mechanism occurring beyond the Mott transition. First principles calculations are used to investigate the origin of the increased boron incorporati...
International audienceBoron doped diamond (BDD) is a very promising material for high frequency and ...
The electrical characteristics of high quality single crystal boron-doped diamond are studied. Sampl...
International audienceBoron doped diamond (BDD) is a very promising material for high frequency and ...
The methane concentration dependence of the plasma gas phase on surface morphology and boron incorpo...
In this paper, the effect of boron doping on the electrical, morphological and structural properties...
This paper reports the surface morphology and structural imperfection of boron-doped diamond films p...
Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for...
Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for...
International audienceEpitaxial lateral growth will be required if complex diamond-based device arch...
ine The deposition of boron-doped homoepitaxial single crystal diamond is investigated using a micro...
Diamond is a unique material with many exceptional properties. It has therefore been proven to be an...
International audienceBoron incorporation from the gas phase was achieved in MPCVD grown (100)-orien...
International audienceBoron incorporation from the gas phase was achieved in MPCVD grown (100)-orien...
The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency...
High quality single crystal boron-doped diamond films are deposited in a microwave plasma-assisted C...
International audienceBoron doped diamond (BDD) is a very promising material for high frequency and ...
The electrical characteristics of high quality single crystal boron-doped diamond are studied. Sampl...
International audienceBoron doped diamond (BDD) is a very promising material for high frequency and ...
The methane concentration dependence of the plasma gas phase on surface morphology and boron incorpo...
In this paper, the effect of boron doping on the electrical, morphological and structural properties...
This paper reports the surface morphology and structural imperfection of boron-doped diamond films p...
Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for...
Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for...
International audienceEpitaxial lateral growth will be required if complex diamond-based device arch...
ine The deposition of boron-doped homoepitaxial single crystal diamond is investigated using a micro...
Diamond is a unique material with many exceptional properties. It has therefore been proven to be an...
International audienceBoron incorporation from the gas phase was achieved in MPCVD grown (100)-orien...
International audienceBoron incorporation from the gas phase was achieved in MPCVD grown (100)-orien...
The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency...
High quality single crystal boron-doped diamond films are deposited in a microwave plasma-assisted C...
International audienceBoron doped diamond (BDD) is a very promising material for high frequency and ...
The electrical characteristics of high quality single crystal boron-doped diamond are studied. Sampl...
International audienceBoron doped diamond (BDD) is a very promising material for high frequency and ...