Many approaches, developments, structures and materials have been proposed these last years to offer innovative solutions allowing the decrease of the CO 2 production and the energy consumption while increasing the efficiency of the properties which are aiming for. Over the last decade, among the approaches developed, a growth process has experienced an important boom related to the possibility it offers on the development of high quality layers. It concerns the Atomic Layer Deposition technique (ALD) that allows growing conformal layer on a substrate having high surface/volume ratio. Although such a technique is well developed and used for microelectronic and photovoltaic applications, the works on photonic devices are still at an early st...
International audienceAluminium oxide (Al2O3) films were deposited on silicon substrates using plasm...
In the past decade, atomic layer deposition (ALD) has become an important thin film deposition techn...
We report an excellent growth behavior of a high-κ dielectric on ReS2, a two-dimensional (2D) t...
International audienceMany approaches, developments, structures and materials have been proposed the...
An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most common...
Crystalline rare‐earth (RE)‐doped Y2O3 films are an attractive system for a wide range of photonics ...
Atomic layer deposition (ALD), also referred to historically as atomic layer epitaxy, is a vapor-pha...
We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon su...
The present thesis describes atomic layer deposition (ALD) of ternary rare earth (RE) oxides and cha...
A good dielectric layer on the GaAs substrate is one of the critical issues to be solved for introdu...
Conventional atomic layer deposition (ALD) is a thermo-chemical process where co-reagents are sequen...
Gd2O3 and Dy2O3 thin films were grown by atomic layer deposition (ALD) on Si(100) substrates using t...
Atomic layer deposition (ALD) uses surface reactions of gaseous precursors to grow thin films of mat...
Al2O3 thin films were deposited on Si substrates by atomic layer deposition ~ALD! using Al(CH3)3 ~tr...
The experimental aim of the work presented in this thesis was to determine the suitability of alumin...
International audienceAluminium oxide (Al2O3) films were deposited on silicon substrates using plasm...
In the past decade, atomic layer deposition (ALD) has become an important thin film deposition techn...
We report an excellent growth behavior of a high-κ dielectric on ReS2, a two-dimensional (2D) t...
International audienceMany approaches, developments, structures and materials have been proposed the...
An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most common...
Crystalline rare‐earth (RE)‐doped Y2O3 films are an attractive system for a wide range of photonics ...
Atomic layer deposition (ALD), also referred to historically as atomic layer epitaxy, is a vapor-pha...
We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon su...
The present thesis describes atomic layer deposition (ALD) of ternary rare earth (RE) oxides and cha...
A good dielectric layer on the GaAs substrate is one of the critical issues to be solved for introdu...
Conventional atomic layer deposition (ALD) is a thermo-chemical process where co-reagents are sequen...
Gd2O3 and Dy2O3 thin films were grown by atomic layer deposition (ALD) on Si(100) substrates using t...
Atomic layer deposition (ALD) uses surface reactions of gaseous precursors to grow thin films of mat...
Al2O3 thin films were deposited on Si substrates by atomic layer deposition ~ALD! using Al(CH3)3 ~tr...
The experimental aim of the work presented in this thesis was to determine the suitability of alumin...
International audienceAluminium oxide (Al2O3) films were deposited on silicon substrates using plasm...
In the past decade, atomic layer deposition (ALD) has become an important thin film deposition techn...
We report an excellent growth behavior of a high-κ dielectric on ReS2, a two-dimensional (2D) t...