We report modulation of the superconducting critical temperature (T-c) of ultrathin niobium diselenide (NbSe2) single crystals by gating an electric double-layer transistor. We realized reversible and irreversible changes of the T-c by adjusting the operating range of the voltage. The reversible and irreversible responses correspond to the electrostatic carrier doping and the electrochemical etching of the crystal, respectively. The results suggest that electric double-layer gating provides opportunities to control and functionalize collective electronic phenomena in two-dimensional crystals. Published by AIP Publishing.</p
In this thesis work we explored the capability of electrochemical gating to reliably control the gro...
NbSe2 is a typical transition metal dichalcogenide with a rich variety of electronic ground states e...
NbSe2 is a typical transition metal dichalcogenide with a rich variety of electronic ground states e...
We report modulation of the superconducting critical temperature (T-c) of ultrathin niobium diseleni...
We report modulation of the superconducting critical temperature (T-c) of ultrathin niobium diseleni...
We report modulation of the superconducting critical temperature (T-c) of ultrathin niobium diseleni...
We report modulation of the superconducting critical temperature (T-c) of ultrathin niobium diseleni...
Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search ...
Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search ...
Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search ...
Layered metallic transition-metal dichalcogenides (TMDCs) are ideal platforms for exploring their fa...
We report the photoresponse of niobium diselenide (NbSe2), a transition metal dichalcogenide which e...
In this thesis work we explored the capability of electrochemical gating to reliably control the gro...
We report the photoresponse of niobium diselenide (NbSe2), a transition metal dichalcogenide which e...
We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cr...
In this thesis work we explored the capability of electrochemical gating to reliably control the gro...
NbSe2 is a typical transition metal dichalcogenide with a rich variety of electronic ground states e...
NbSe2 is a typical transition metal dichalcogenide with a rich variety of electronic ground states e...
We report modulation of the superconducting critical temperature (T-c) of ultrathin niobium diseleni...
We report modulation of the superconducting critical temperature (T-c) of ultrathin niobium diseleni...
We report modulation of the superconducting critical temperature (T-c) of ultrathin niobium diseleni...
We report modulation of the superconducting critical temperature (T-c) of ultrathin niobium diseleni...
Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search ...
Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search ...
Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search ...
Layered metallic transition-metal dichalcogenides (TMDCs) are ideal platforms for exploring their fa...
We report the photoresponse of niobium diselenide (NbSe2), a transition metal dichalcogenide which e...
In this thesis work we explored the capability of electrochemical gating to reliably control the gro...
We report the photoresponse of niobium diselenide (NbSe2), a transition metal dichalcogenide which e...
We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cr...
In this thesis work we explored the capability of electrochemical gating to reliably control the gro...
NbSe2 is a typical transition metal dichalcogenide with a rich variety of electronic ground states e...
NbSe2 is a typical transition metal dichalcogenide with a rich variety of electronic ground states e...