Both alpha-alumina and aluminium nitride are insulators. They are widely applied as tunnel barriers. On the basis of first-principles calculations, it is shown here that the conduction band of these two compounds is of fundamentally different origin than generally assumed. The bottom of the conduction band of both compounds is primarily derived from oxygen/nitrogen 3s states with an admixture of a small amount of aluminium s character only. The presence of the anion 3s states is of importance for the size of the band gap: without them they would be significantly larger. The consequences of these differences are discussed.</p
This thesis divides into two distinct parts, both of which are underpinned by the tight-binding mode...
Generally, the electronic stability of aluminum clusters is associated with either closed electronic...
Rare-earth metal (Eu) doped aluminum nitride has potential application as luminescence materials du...
Both alpha-alumina and aluminium nitride are insulators. They are widely applied as tunnel barriers....
Both alpha-alumina and aluminium nitride are insulators. They are widely applied as tunnel barriers....
Both alpha-alumina and aluminium nitride are insulators. They are widely applied as tunnel barriers....
Both alpha-alumina and aluminium nitride are insulators. They are widely applied as tunnel barriers....
We demonstrate that cation-related localized states strongly perturb the band structure of Al1-xInxN...
Contains fulltext : 36600.pdf (publisher's version ) (Closed access
AC-conductivity measurements were performed on aluminium oxynitrides (Alons) because of their intere...
AC-conductivity measurements were performed on aluminium oxynitrides (Alons) because of their intere...
Analytical scanning transmission electron microscopy has been applied to study aluminium nitride (Al...
Energy barriers at interfaces of (100)InP with atomic-layer deposited Al2O3 are determined using int...
Four models of single-walled AlN nanotubes (NTs), which possess (i) two different chiralities (armch...
Spectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al2O3/meta...
This thesis divides into two distinct parts, both of which are underpinned by the tight-binding mode...
Generally, the electronic stability of aluminum clusters is associated with either closed electronic...
Rare-earth metal (Eu) doped aluminum nitride has potential application as luminescence materials du...
Both alpha-alumina and aluminium nitride are insulators. They are widely applied as tunnel barriers....
Both alpha-alumina and aluminium nitride are insulators. They are widely applied as tunnel barriers....
Both alpha-alumina and aluminium nitride are insulators. They are widely applied as tunnel barriers....
Both alpha-alumina and aluminium nitride are insulators. They are widely applied as tunnel barriers....
We demonstrate that cation-related localized states strongly perturb the band structure of Al1-xInxN...
Contains fulltext : 36600.pdf (publisher's version ) (Closed access
AC-conductivity measurements were performed on aluminium oxynitrides (Alons) because of their intere...
AC-conductivity measurements were performed on aluminium oxynitrides (Alons) because of their intere...
Analytical scanning transmission electron microscopy has been applied to study aluminium nitride (Al...
Energy barriers at interfaces of (100)InP with atomic-layer deposited Al2O3 are determined using int...
Four models of single-walled AlN nanotubes (NTs), which possess (i) two different chiralities (armch...
Spectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al2O3/meta...
This thesis divides into two distinct parts, both of which are underpinned by the tight-binding mode...
Generally, the electronic stability of aluminum clusters is associated with either closed electronic...
Rare-earth metal (Eu) doped aluminum nitride has potential application as luminescence materials du...