Often metal nitrides posses unique properties for applications, such as great hardness, high melting points, chemical stability, novel electrical and magnetic properties. One route to the formation of metal nitride films is through ion irradiation of metal surfaces. In this report, the results of irradiation of Au(110) surfaces by nitrogen ions with kinetic energies of 0.5 and 2 keV are studied with high resolution X-ray photoemission spectroscopy. N1s core level spectra show clear evidence for the formation of a gold nitride at, or in close vicinity to, the surface–the first direct observation of nitride formation by this element. Subsurface molecular nitrogen is also observed, the relative concentration of which increases with irradiation...
The nitration of gold surfaces is a nonpolluting method, which can lead to large scale production of...
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconducto...
We present the surface modification of Si(111) into silicon nitride by exposure to energetic N-2(+) ...
Often metal nitrides posses unique properties for applications, such as great hardness, high melting...
Photoemission spectroscopy demonstrates the formation of a surface gold nitride upon irradiation of ...
Photoemission spectroscopy demonstrates the formation of a surface gold nitride upon irradiation of ...
This study demonstrates the formation of two-dimensional GaN on GaAs (001) surface by bombardment of...
The structure of nitride containing gold films produced by reactive ion sputtering and nitrogen plas...
A 60 nm film of copper was deposited on a gold foil and a 60 nm film of gold was deposited on a copp...
AuN films were produced on 304 stainless steel using an arc-pulsed - assisted plasma physical vapor ...
interaction of low-energy nitrogen ions (0.3-2 keV N(2)(+)) with GaAs (100) surfaces has been studie...
The effect of active nitrogen, generated by a radio frequency plasma source, on clean GaAs (001) sur...
4d and 5d series of the transition metals are used to the obtaining nitrides metallic, due to the sy...
The effect of atomic nitrogen, generated by a radio frequency plasma source, on clean GaAs(001) surf...
Gold nitride is important for potential applications, such as, to replace metallic gold in electroni...
The nitration of gold surfaces is a nonpolluting method, which can lead to large scale production of...
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconducto...
We present the surface modification of Si(111) into silicon nitride by exposure to energetic N-2(+) ...
Often metal nitrides posses unique properties for applications, such as great hardness, high melting...
Photoemission spectroscopy demonstrates the formation of a surface gold nitride upon irradiation of ...
Photoemission spectroscopy demonstrates the formation of a surface gold nitride upon irradiation of ...
This study demonstrates the formation of two-dimensional GaN on GaAs (001) surface by bombardment of...
The structure of nitride containing gold films produced by reactive ion sputtering and nitrogen plas...
A 60 nm film of copper was deposited on a gold foil and a 60 nm film of gold was deposited on a copp...
AuN films were produced on 304 stainless steel using an arc-pulsed - assisted plasma physical vapor ...
interaction of low-energy nitrogen ions (0.3-2 keV N(2)(+)) with GaAs (100) surfaces has been studie...
The effect of active nitrogen, generated by a radio frequency plasma source, on clean GaAs (001) sur...
4d and 5d series of the transition metals are used to the obtaining nitrides metallic, due to the sy...
The effect of atomic nitrogen, generated by a radio frequency plasma source, on clean GaAs(001) surf...
Gold nitride is important for potential applications, such as, to replace metallic gold in electroni...
The nitration of gold surfaces is a nonpolluting method, which can lead to large scale production of...
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconducto...
We present the surface modification of Si(111) into silicon nitride by exposure to energetic N-2(+) ...