Optimization of RF- and DC-sputtered NbTiN films for integration with Nb-based SIS junctions

NbTiN is one of the most promising materials for use in the tuning circuits of Nb-based SIS mixers for operating frequencies above the gap frequency of Nb (/spl ap/700 GHz). We examine the properties of NbTiN films obtained using an unbalanced sputtering source in both RF and DC operating regimes. It is found that the properties of NbTiN films are strongly affected by the total pressure of the sputtering process. Films obtained under lower pressures have higher compressive stresses and lower resistivities. The best NbTiN films are obtained by DC sputtering and have a transition temperature of 14.4 K, a resistivity of 90 /spl mu//spl Omega//spl middot/cm at 20 K, and a compressive stress of -1 GPa. Films with a resistivity of 110 /spl mu//spl Omega//spl middot/cm at 20 K and a compressive stress of -0.5 GPa have been successfully used as a stripline material for Nb/Al-AlO/sub x//Nb SIS junctions on fused quartz substrates.NbTiN is one of the most promising materials for use in the tuning circuits of Nb-based SIS mixers for operating frequencies above the gap frequency of Nb (/spl ap/700 GHz). We examine the properties of NbTiN films obtained using an unbalanced sputtering source in both RF and DC operating regimes. It is found that the properties of NbTiN films are strongly affected by the total pressure of the sputtering process. Films obtained under lower pressures have higher compressive stresses and lower resistivities. The best NbTiN films are obtained by DC sputtering and have a transition temperature of 14.4 K, a resistivity of 90 /spl mu//spl Omega//spl middot/cm at 20 K, and a compressive stress of -1 GPa. Films with a resistivity of 110 /spl mu//spl Omega//spl middot/cm at 20 K and a compressive stress of -0.5 GPa have been successfully used as a stripline material for Nb/Al-AlO/sub x//Nb SIS junctions on fused quartz substrates