A calculation of the binding energy of an exciton confined in cylindrical quantum wires of GaAs surrounded by (Ga, Al) As in the presence of a uniform magnetic field is reported as a function of wire radius, potential height and magnetic field strength, using effective mass approximation and variational approach techniques. For larger magnetic field strength and aluminium (Al) concentration values, the binding energies get larger as expected and are found to be in good agreement with previous theoretical reports. However, we also observed a shift in the binding energy maxima position to smaller wire radii with increasing magnetic field strength and Al concentration. (C) 2009 Elsevier Ltd. All rights reserved
The combined effects of hydrostatic pressure and temperature on donor impurity binding energy in cyl...
The binding energy of an exciton bound to a neutral donor (D-0,X) in GaAs quantum-well wires is calc...
AbstractThe binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaA...
A calculation of the binding energy of an exciton confined in cylindrical quantum wires of GaAs surr...
In this work, using the effective mass approximation within variational approach, we have studied th...
The binding energy of excitons in quantum well wires of GaAs surrounded by Ga1-xAlxAs was calculated...
The ground state binding energies of axial hydrogenic impurities in a coaxial cylindrical quantum we...
The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surro...
We have performed a theoretical study of the Aluminum concentration and axis-parallel applied magnet...
We calculated the magnetic field dependency of hydrogenic donor binding energy in cylindrical quantu...
Low-intensity magneto-photoluminescence measurements of the diamagnetic shifts of modulated barrie...
Magnetic field and intense laser radiation effects on the exciton binding energy and interband optic...
We have described the calculation of hydrogenic impurity binding energies in cylindrical GaAs-Ga1-xA...
WOS: 000384227700006The behavior of a donor in the GaAs-Ga1-xAlxAs quantum well wire represented by ...
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1−x Alx As quantum wells is...
The combined effects of hydrostatic pressure and temperature on donor impurity binding energy in cyl...
The binding energy of an exciton bound to a neutral donor (D-0,X) in GaAs quantum-well wires is calc...
AbstractThe binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaA...
A calculation of the binding energy of an exciton confined in cylindrical quantum wires of GaAs surr...
In this work, using the effective mass approximation within variational approach, we have studied th...
The binding energy of excitons in quantum well wires of GaAs surrounded by Ga1-xAlxAs was calculated...
The ground state binding energies of axial hydrogenic impurities in a coaxial cylindrical quantum we...
The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surro...
We have performed a theoretical study of the Aluminum concentration and axis-parallel applied magnet...
We calculated the magnetic field dependency of hydrogenic donor binding energy in cylindrical quantu...
Low-intensity magneto-photoluminescence measurements of the diamagnetic shifts of modulated barrie...
Magnetic field and intense laser radiation effects on the exciton binding energy and interband optic...
We have described the calculation of hydrogenic impurity binding energies in cylindrical GaAs-Ga1-xA...
WOS: 000384227700006The behavior of a donor in the GaAs-Ga1-xAlxAs quantum well wire represented by ...
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1−x Alx As quantum wells is...
The combined effects of hydrostatic pressure and temperature on donor impurity binding energy in cyl...
The binding energy of an exciton bound to a neutral donor (D-0,X) in GaAs quantum-well wires is calc...
AbstractThe binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaA...