Quenching experiments are performed using state of the art p-type Czochralski-grown Ge samples. The vacancy formation energy and thermal equilibrium concentration are determined on the basis of resistivity changes measured after quenching, using van der Pauw and Hall measurements. The results are compared with previously published experimental data and with results from analytical and ab initio calculations of the formation energy of the vacancy in different charge states. The deep levels introduced during the quenching step are studied with deep level transient spectroscopy and with FTIR, revealing besides the typical quenching related defects which are probably connected with vacancies also the presence of Cu
Electrical (and sometimes also mechanical) properties of a semiconductor are greatly influenced by v...
Changes in the electrical conductivity and Hall coefficient of germanium samples, irradiated with 4....
P-type germanium single crystals (8 X 1014 Ga/cm3 and 6 X 1015 Ga/cm3) were irradiated with 1.1 MeV ...
Quenching experiments are performed using state of the art p-type Czochralski-grown Ge samples. The ...
Quenching experiments are performed using state of the art p-type Czochralski-grown Ge samples. The ...
Due to the high carrier mobility in Ge, it is more and more used as active semiconducting layer in a...
Its high carrier drift mobility, low band gap and high atomic number make germanium suited for many ...
This thesis covers the application of the local density approximation of density functional theory t...
Quenching experiments have been performed on both n- and p-type Ge in a dedicated furnace using infr...
Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium ...
An investigation has been made of the formation energy, and the activation energy of migration of va...
The formation energies of intrinsic point defects in Si and Ge were calculated by means of Density F...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
Electrical properties of semiconductor materials are greatly influenced by point defects such as vac...
Electrical (and sometimes also mechanical) properties of a semiconductor are greatly influenced by v...
Changes in the electrical conductivity and Hall coefficient of germanium samples, irradiated with 4....
P-type germanium single crystals (8 X 1014 Ga/cm3 and 6 X 1015 Ga/cm3) were irradiated with 1.1 MeV ...
Quenching experiments are performed using state of the art p-type Czochralski-grown Ge samples. The ...
Quenching experiments are performed using state of the art p-type Czochralski-grown Ge samples. The ...
Due to the high carrier mobility in Ge, it is more and more used as active semiconducting layer in a...
Its high carrier drift mobility, low band gap and high atomic number make germanium suited for many ...
This thesis covers the application of the local density approximation of density functional theory t...
Quenching experiments have been performed on both n- and p-type Ge in a dedicated furnace using infr...
Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium ...
An investigation has been made of the formation energy, and the activation energy of migration of va...
The formation energies of intrinsic point defects in Si and Ge were calculated by means of Density F...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
Electrical properties of semiconductor materials are greatly influenced by point defects such as vac...
Electrical (and sometimes also mechanical) properties of a semiconductor are greatly influenced by v...
Changes in the electrical conductivity and Hall coefficient of germanium samples, irradiated with 4....
P-type germanium single crystals (8 X 1014 Ga/cm3 and 6 X 1015 Ga/cm3) were irradiated with 1.1 MeV ...