Monolithic integration of GaAs MESFET and InP/InGaAsP 2x2 optical switch
- Pollentier, Ivan
- Buydens, Luc
- Demeester, Piet
- Van Daele, Peter
- Enard, A
- Lallier, E
- Glastre, G
- Rondi, D
Publication date
January 1991
DOI Publisher
Institution of Engineering and Technology (IET) ISSN
0013-5194 Citation count (estimate)
3Abstract
An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2 x 2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB
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