Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport

International audienceSiC Selective Epitaxial Growth (SEG) by Vapor-Liquid-Solid (VLS) transport on a bowl-shaped geometry appears to be a promising solution to perform deep, highly doped and high quality p-type doped area. Such SEG-VLS growth of highly p-doped (> 5x1019 cm-3) SiC layer was successfully demonstrated recently on large and small areas fabricated by Reactive Ion Etching (RIE). Moreover, a high quality P++(VLS)-N junction can be achieved by using this technique that offer new prospects for the achievement of new power electronics devices, including deeply buried peripheral protection zones such as guard-rings or JBS structures