We demonstrate the use of 193nm optical lithography for fabricating nanophotonic wire structures on sificon-on-insulator (SOI) technology. We present fabrication and measurement result on wire devices. We report a propagation loss of 2.8dB/cm for 450X220nm photonic wire
Abstract. High index contrast, wavelength-scale structures are the key to ultra-compact integration ...
Abstract—We demonstrate single-mode photonic wires in Silicon-on-insulator with propagation loss as ...
A method for fabricating single crystal silicon nanowires is presented using top-down optical lithog...
We demonstrate the use of 193nm optical lithography for fabricating nanophotonic wire structures on ...
Abstract—High-index contrast silicon-on-insulator technology enables wavelength-scale compact photon...
High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circui...
Nanophotonics promise a dramatic scale reduction compared to contemporary photonic components. This ...
Abstract—We report subnanometer linewidth uniformity in sil-icon nanophotonics devices fabricated us...
Silicon on Insulator is an ideal platform for largescale nanophotonic integration. We show that tigh...
For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-S...
Abstract: We report sub-nanometer linewidth control in high index contrast photonic devices using CM...
We report subnanometer linewidth uniformity in silicon nanophotonics devices fabricated using high-v...
Nanofabrication processes are widely used to make the integrated circuits and computer chips that ar...
Large-scale photonics integration has been proposed for many years to support the ever increasing re...
Abstract — We demonstrate both ring resonator drop filters and arrayed waveguide gratings in Silicon...
Abstract. High index contrast, wavelength-scale structures are the key to ultra-compact integration ...
Abstract—We demonstrate single-mode photonic wires in Silicon-on-insulator with propagation loss as ...
A method for fabricating single crystal silicon nanowires is presented using top-down optical lithog...
We demonstrate the use of 193nm optical lithography for fabricating nanophotonic wire structures on ...
Abstract—High-index contrast silicon-on-insulator technology enables wavelength-scale compact photon...
High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circui...
Nanophotonics promise a dramatic scale reduction compared to contemporary photonic components. This ...
Abstract—We report subnanometer linewidth uniformity in sil-icon nanophotonics devices fabricated us...
Silicon on Insulator is an ideal platform for largescale nanophotonic integration. We show that tigh...
For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-S...
Abstract: We report sub-nanometer linewidth control in high index contrast photonic devices using CM...
We report subnanometer linewidth uniformity in silicon nanophotonics devices fabricated using high-v...
Nanofabrication processes are widely used to make the integrated circuits and computer chips that ar...
Large-scale photonics integration has been proposed for many years to support the ever increasing re...
Abstract — We demonstrate both ring resonator drop filters and arrayed waveguide gratings in Silicon...
Abstract. High index contrast, wavelength-scale structures are the key to ultra-compact integration ...
Abstract—We demonstrate single-mode photonic wires in Silicon-on-insulator with propagation loss as ...
A method for fabricating single crystal silicon nanowires is presented using top-down optical lithog...