Add to ORKGAbstract—This paper presents a 0.13 µm CMOS Class-E PA with 20.5 dBm maximum output power and 52.5% PAE. The PA covers a wide dynamic range from 1.5 dBm to 20.5 dBm. A novel configurable switch is applied for both ranging and communication. The measured fast rise time for ranging is merely 4.5 ns while the slow rise/fall time for communication is 90 ns, which allows a maximum data rate for return-to-zero BPSK modulation of 4 Mbps
This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-ba...
This thesis presents the design process of a class E RF power amplifier and a transmitter in a stan...
Abstract—A dynamic-range-improved class-E power amplifier (PA) is achieved via combining cascode mod...
Abstract—This paper presents a 0.13 µm CMOS Class-E PA with 20.5 dBm maximum output power and 52.5% ...
The last few years, indoor positioning has gained more and more interest. Modern indoor positioning ...
In this brief, the losses in Class-E power amplifiers (PAs) with finite dc-feed inductance are analy...
Abstract—In this paper, an improved method of power control is introduced to widen the range of outp...
A 65nm CMOS broadband two-stage class-E power amplifier (PA) using high voltage extended-drain devic...
A 1.9-GHz CMOS power amplifier for polar transmitters was implemented with a 0.25-mu m radio frequen...
In this research article, an advanced class-E Power Amplifier (PA) working at center frequency 1842....
This paper shows that CMOS Class-E PAs are capable of high Power-Added Efficiency (PAE), even when d...
Abstract—In this paper, a CMOS class-E power amplifier with power control is presented. Its output p...
This thesis describes the design of an RF CMOS Power Amplifier (PA) combined with a T/R switch in a ...
grantor: University of TorontoIn this thesis, the use of Class E power amplifiers for digi...
This paper presents a 1-W, class-E power amplifier that is implemented in a 0.35-m CMOS technology a...
This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-ba...
This thesis presents the design process of a class E RF power amplifier and a transmitter in a stan...
Abstract—A dynamic-range-improved class-E power amplifier (PA) is achieved via combining cascode mod...
Abstract—This paper presents a 0.13 µm CMOS Class-E PA with 20.5 dBm maximum output power and 52.5% ...
The last few years, indoor positioning has gained more and more interest. Modern indoor positioning ...
In this brief, the losses in Class-E power amplifiers (PAs) with finite dc-feed inductance are analy...
Abstract—In this paper, an improved method of power control is introduced to widen the range of outp...
A 65nm CMOS broadband two-stage class-E power amplifier (PA) using high voltage extended-drain devic...
A 1.9-GHz CMOS power amplifier for polar transmitters was implemented with a 0.25-mu m radio frequen...
In this research article, an advanced class-E Power Amplifier (PA) working at center frequency 1842....
This paper shows that CMOS Class-E PAs are capable of high Power-Added Efficiency (PAE), even when d...
Abstract—In this paper, a CMOS class-E power amplifier with power control is presented. Its output p...
This thesis describes the design of an RF CMOS Power Amplifier (PA) combined with a T/R switch in a ...
grantor: University of TorontoIn this thesis, the use of Class E power amplifiers for digi...
This paper presents a 1-W, class-E power amplifier that is implemented in a 0.35-m CMOS technology a...
This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-ba...
This thesis presents the design process of a class E RF power amplifier and a transmitter in a stan...
Abstract—A dynamic-range-improved class-E power amplifier (PA) is achieved via combining cascode mod...