A hybrid evanescently coupled III-V/silicon distributed-feedback laser with an integrated monitor photodiode, based on adhesive divinyl siloxane-benzocyclobutene bonding and emitting at 1310 nm, is presented. An output power of similar to 2.85 mW is obtained in a continuous wave regime at 10 degrees C. The threshold current is 20 mA and a sidemode suppression ratio of 45 dB is demonstrated. Optical feedback is provided via corrugations on top of the silicon rib waveguide, while a specially developed bonding procedure yields 40-nm-thick adhesive bonding layers, enabling efficient evanescent coupling
International audienceWith an ever-growing transmission data rate, electronic components reach a lim...
We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized throu...
We report the use of both direct and polymer bonding for the fabrication of Silicon/III-V evanescent...
A hybrid evanescently coupled III-V/silicon distributed-feedback laser with an integrated monitor ph...
Abstract—An evanescently coupled, hybrid III–V/Silicon Fabry–Pérot laser based on adhesive divinyl s...
We present the first experimental demonstration of a novel III-V-on-silicon distributed feedback las...
We present the first experimental demonstration of a novel III-V-on-silicon distributed feedback las...
We present the first experimental demonstration of a novel III-V-on-silicon distributed feedback las...
Abstract: We present an evanescently-coupled, hybrid III-V/Silicon Fabry-Perot laser based on adhesi...
The heterogeneous integration of III-V semiconductor lasers on a silicon waveguide platform using DV...
We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized throu...
In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrat...
The heterogeneous integration of III-V semiconductor lasers on a silicon waveguide platform using DV...
Recent years have witnessed an increasing research interest in hybrid lasers based on evanescent cou...
International audienceWith an ever-growing transmission data rate, electronic components reach a lim...
International audienceWith an ever-growing transmission data rate, electronic components reach a lim...
We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized throu...
We report the use of both direct and polymer bonding for the fabrication of Silicon/III-V evanescent...
A hybrid evanescently coupled III-V/silicon distributed-feedback laser with an integrated monitor ph...
Abstract—An evanescently coupled, hybrid III–V/Silicon Fabry–Pérot laser based on adhesive divinyl s...
We present the first experimental demonstration of a novel III-V-on-silicon distributed feedback las...
We present the first experimental demonstration of a novel III-V-on-silicon distributed feedback las...
We present the first experimental demonstration of a novel III-V-on-silicon distributed feedback las...
Abstract: We present an evanescently-coupled, hybrid III-V/Silicon Fabry-Perot laser based on adhesi...
The heterogeneous integration of III-V semiconductor lasers on a silicon waveguide platform using DV...
We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized throu...
In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrat...
The heterogeneous integration of III-V semiconductor lasers on a silicon waveguide platform using DV...
Recent years have witnessed an increasing research interest in hybrid lasers based on evanescent cou...
International audienceWith an ever-growing transmission data rate, electronic components reach a lim...
International audienceWith an ever-growing transmission data rate, electronic components reach a lim...
We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized throu...
We report the use of both direct and polymer bonding for the fabrication of Silicon/III-V evanescent...