Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 10(19) cm(-3) and 10(20) cm(-3). In order to investigate thermal donor formation, isothermal annealing at 450 degrees C for 0.5 - 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 10(14) and 10(17) e/cm(2) to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques