The infrared absorption of interstitial O-17 and O-18 has been measured at high resolution in natural germanium in a multireflection geometry. The asymmetric mode of O-18 is observed to be broadened by interaction with the phonon background while that of O-17 is unaffected. Tnt: broadening is confirmed by results on an O-18-enriched sample. All the O and Ge isotope shifts can be fitted or predicted rather accurately by a two-parameter semiempirical model using values determined by Pajot and Clauws in 1988. In the multireflection geometry, new lines of low intensity are also observed and they are ascribed to transitions with change of the rotational state of O-16 between the ground and excited vibrational states. Energies of the two-dimensio...
The annealing effect in the temperature range from 350 to 450 ∘C on the behavior of interstitial oxy...
Extended x-ray absorption fine structure has been measured on two powdered samples of 70Ge and 76Ge ...
Within the past years the optical excitations of electrons have been measured for semiconductor sam...
The infrared absorption of interstitial O-17 and O-18 has been measured at high resolution in natura...
The intensities of infrared absorption due to the asymmetric stretching vibrations of interstitial o...
The nu(3) (862.5 cm(-1)) vibration of oxygen in crystalline germanium is shown to decay into one nu(...
Abstract The rotational states of O in natural Ge as determined by phonon spectroscopy are found to ...
Infrared absorption of n- and p-Ge crystals enriched with O-16 and/or O-18 isotopes was studied afte...
Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen at...
It was recently discovered that in electron-irradiated germanium doped with oxygen a local vibration...
The stable isotopes of naturally occurring Germanium may emit slightly different frequencies, result...
Oxygen doped Ge has been irradiated with 2-MeV electrons and isochronally annealed between 80 and 44...
Diatomic germanium oxide, GeO, and germanium sulfide, GeS, have been studied by Fourier transform mi...
Kinetics of interstitial oxygen loss and oxygen-related thermal double donor (TDD) generation upon h...
Vacancy-oxygen (VO) complexes in Ge crystals have been studied by means of high-resolution infrared ...
The annealing effect in the temperature range from 350 to 450 ∘C on the behavior of interstitial oxy...
Extended x-ray absorption fine structure has been measured on two powdered samples of 70Ge and 76Ge ...
Within the past years the optical excitations of electrons have been measured for semiconductor sam...
The infrared absorption of interstitial O-17 and O-18 has been measured at high resolution in natura...
The intensities of infrared absorption due to the asymmetric stretching vibrations of interstitial o...
The nu(3) (862.5 cm(-1)) vibration of oxygen in crystalline germanium is shown to decay into one nu(...
Abstract The rotational states of O in natural Ge as determined by phonon spectroscopy are found to ...
Infrared absorption of n- and p-Ge crystals enriched with O-16 and/or O-18 isotopes was studied afte...
Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen at...
It was recently discovered that in electron-irradiated germanium doped with oxygen a local vibration...
The stable isotopes of naturally occurring Germanium may emit slightly different frequencies, result...
Oxygen doped Ge has been irradiated with 2-MeV electrons and isochronally annealed between 80 and 44...
Diatomic germanium oxide, GeO, and germanium sulfide, GeS, have been studied by Fourier transform mi...
Kinetics of interstitial oxygen loss and oxygen-related thermal double donor (TDD) generation upon h...
Vacancy-oxygen (VO) complexes in Ge crystals have been studied by means of high-resolution infrared ...
The annealing effect in the temperature range from 350 to 450 ∘C on the behavior of interstitial oxy...
Extended x-ray absorption fine structure has been measured on two powdered samples of 70Ge and 76Ge ...
Within the past years the optical excitations of electrons have been measured for semiconductor sam...