Si photonic device uniformity improvement using wafer-scale location specific processing
- Selvaraja, shankar kumar
- Fernandez, Luis
- Vanslembrouck, Michaël
- Everaert, Jean-Luc
- Dumon, Pieter
- Van Campenhout, Joris
- Bogaerts, Wim
- Absil, Philip
Publication date
January 2012
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) Language
EnglishAbstract
We report two-fold improvement in Si photonic device uniformity over a 200mm SOI wafer through location specific processing. A within wafer thickness non-uniformity of 0.8nm yielding a grating fiber-coupler peak-wavelength non-uniformity of 1.8nm is achieved
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