The authors are grateful to Prof. R. Correia (Univ. de Aveiro) for help in performing the Raman experimental work. Accepted version (9 January 2007)Ge nanocrystals (NCs) embedded in aluminum oxide were grown by RF-magnetron sputtering. Raman, high resolution transmission electron microscopy (HRTEM), selected area diffraction (SAD), and X-ray diffraction (XRD) techniques confirmed good cristallinity of the NCs from samples annealed at 800 °C. The average NC size was estimated to be around 7 nm. Photoluminescence (PL) measurements show an emission related to the NCs. The temperature dependence of the PL confirms the confinement phenomenon in the Ge NCs.Project number POCTI/FIS/56930/2004 and STRP 505...
AbstractGe nanocrystals were fabricated in Si3N4 matrix by rf (radio frequency) magnetron sputtering...
Abstract. In this paper, we investigate the effect of Ge nanocrystal size on the Raman results. The ...
Highly crystalline germanium (Ge) nanocrystals in the size range 2--10 nm were grown in inverse mice...
Germanium (Ge) nanocrystals (NCs) embedded in alumina thin films were produced by deposition on fuse...
Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolut...
Nanocrystalline Ge films were prepared by isotropic chemical etching on single-crystalline Ge substr...
Ge nanocrystals were formed in Al2O3 matrix by implantation of Ge ions into sapphire (alpha-Al2O3) s...
SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique...
Quantum confined germanium (Ge) nanocrystals were synthesized by a thermal annealing of germanium ox...
Ge nanocrystals formed in a SiO2 matrix by ion implantation were studied by Raman spectroscopy. It i...
Amorphous Ge/SiO2 multilayer structures deposited by magnetron sputtering have been annealed at diff...
We report on the large photoluminescence emission (PL) obtained in germanium nanocrystals of about ...
Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF ...
International audienceGe-doped Al2O3 films were deposited on long, non-rotated quarts substrate by m...
In this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO...
AbstractGe nanocrystals were fabricated in Si3N4 matrix by rf (radio frequency) magnetron sputtering...
Abstract. In this paper, we investigate the effect of Ge nanocrystal size on the Raman results. The ...
Highly crystalline germanium (Ge) nanocrystals in the size range 2--10 nm were grown in inverse mice...
Germanium (Ge) nanocrystals (NCs) embedded in alumina thin films were produced by deposition on fuse...
Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolut...
Nanocrystalline Ge films were prepared by isotropic chemical etching on single-crystalline Ge substr...
Ge nanocrystals were formed in Al2O3 matrix by implantation of Ge ions into sapphire (alpha-Al2O3) s...
SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique...
Quantum confined germanium (Ge) nanocrystals were synthesized by a thermal annealing of germanium ox...
Ge nanocrystals formed in a SiO2 matrix by ion implantation were studied by Raman spectroscopy. It i...
Amorphous Ge/SiO2 multilayer structures deposited by magnetron sputtering have been annealed at diff...
We report on the large photoluminescence emission (PL) obtained in germanium nanocrystals of about ...
Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF ...
International audienceGe-doped Al2O3 films were deposited on long, non-rotated quarts substrate by m...
In this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO...
AbstractGe nanocrystals were fabricated in Si3N4 matrix by rf (radio frequency) magnetron sputtering...
Abstract. In this paper, we investigate the effect of Ge nanocrystal size on the Raman results. The ...
Highly crystalline germanium (Ge) nanocrystals in the size range 2--10 nm were grown in inverse mice...