We have investigated the structural properties of Si1−xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1−xGex nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.PTDC/FIS/70194/2006 financed by Portuguese Foundation for Science and Technology (FCT)B...
Nanocomposite thin films of Si nanocrystals (nc-Si) embedded in SiO2 have attracted intensive resear...
Flash type electronic memories are the preferred format in code storage at complex programs running ...
In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventi...
We have investigated the structural properties of Si1 − xGex nanocrystals formed in an amorphous SiO...
SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique...
Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF ...
Applications of semiconductor nanocrystal in electronics are promising. Various techniques were deve...
Équipe 104 : NanomatériauxInternational audienceAmorphous GeOx films and GeOx/SiO2 multilayers were ...
Germanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PEC...
The authors would like also to thank José Santos for technical support.In this work, SiGe/SiO2 multi...
The formation of GeSi nanoparticles on an SiO2 matrix is studied here by synchrotron-based technique...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Structural variations of SiOx matrix have been studied with Fourier Transform Infrared Spectroscopy ...
SiGe nanocrystals have been formed in SiO2 matrix by cosputtering Si, Ge, and SiO2 independently on ...
Ge nanocrystals formed in a SiO2 matrix by ion implantation were studied by Raman spectroscopy. It i...
Nanocomposite thin films of Si nanocrystals (nc-Si) embedded in SiO2 have attracted intensive resear...
Flash type electronic memories are the preferred format in code storage at complex programs running ...
In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventi...
We have investigated the structural properties of Si1 − xGex nanocrystals formed in an amorphous SiO...
SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique...
Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF ...
Applications of semiconductor nanocrystal in electronics are promising. Various techniques were deve...
Équipe 104 : NanomatériauxInternational audienceAmorphous GeOx films and GeOx/SiO2 multilayers were ...
Germanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PEC...
The authors would like also to thank José Santos for technical support.In this work, SiGe/SiO2 multi...
The formation of GeSi nanoparticles on an SiO2 matrix is studied here by synchrotron-based technique...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Structural variations of SiOx matrix have been studied with Fourier Transform Infrared Spectroscopy ...
SiGe nanocrystals have been formed in SiO2 matrix by cosputtering Si, Ge, and SiO2 independently on ...
Ge nanocrystals formed in a SiO2 matrix by ion implantation were studied by Raman spectroscopy. It i...
Nanocomposite thin films of Si nanocrystals (nc-Si) embedded in SiO2 have attracted intensive resear...
Flash type electronic memories are the preferred format in code storage at complex programs running ...
In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventi...