Spatially quantized dipolar phonon modes in a spherical quantum dot ~QD! made of a polar isotropic material are considered in the framework of a continnum model. Different mechanical boundary conditions are analyzed, which are shown to strongly influence the spectrum of the dipole-active modes. The phonon-related polarizability of a single QD and an average dielectric function of a composite containing QDs are calculated. Numerical results are presented for CdSe and InP dots. A strongly dipole-active gap mode is predicted for InP QDs embedded in a matrix with a defined range of dielectric constant. The effect of increasing QD concentration in ensembles is discussed in terms of the dipole–dipole interaction between the dots, which can res...
The photoluminescence emission by mesoscopic condensed matter is ultimately dictated by the fine-str...
Abstract. The electron and hole polaron energies are found in a quantum dot made of the materials wi...
A theory of photoluminescence in semiconductor quantum dots is developed which relies on two key ing...
excitation of confined dipolar vibrational modes was studied, both theoretically and experimentally....
Absorption of far-infrared (FIR) radiation in very small CdSe crystallites (quantum dots, QDs) via e...
The dispersions of the top interface optical phonons and the side interface optical phonons in cylin...
Phonon modes in spherical InAs quantum dots (QDs) with up to 11 855 atoms (about 8.5 nm in diameter)...
Within semiconductor quantum dots (QDs), exciton recombination processes are noteworthy for dependi...
This work is devoted to experimental and theoretical studies of optical phonons confined in CdS nano...
The polar optical phonon vibrating modes of a quasi-zero-dimensional (Q0D) wurtzite cylindrical quan...
The linear optical absorption of an ensemble of semiconductor quantum dots randomly positioned in a...
Phonon modes in spherical GaAs quantum dots (QDs) with up to 11,855 atoms (8 nm in size) are calcula...
CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PE...
Within the framework of the macroscopic dielectric continuum model, the interface-optical-propagatin...
Analytical polar optical phonon states in a wurtzite ZnO-based cylindrical coupling quantum dots (CQ...
The photoluminescence emission by mesoscopic condensed matter is ultimately dictated by the fine-str...
Abstract. The electron and hole polaron energies are found in a quantum dot made of the materials wi...
A theory of photoluminescence in semiconductor quantum dots is developed which relies on two key ing...
excitation of confined dipolar vibrational modes was studied, both theoretically and experimentally....
Absorption of far-infrared (FIR) radiation in very small CdSe crystallites (quantum dots, QDs) via e...
The dispersions of the top interface optical phonons and the side interface optical phonons in cylin...
Phonon modes in spherical InAs quantum dots (QDs) with up to 11 855 atoms (about 8.5 nm in diameter)...
Within semiconductor quantum dots (QDs), exciton recombination processes are noteworthy for dependi...
This work is devoted to experimental and theoretical studies of optical phonons confined in CdS nano...
The polar optical phonon vibrating modes of a quasi-zero-dimensional (Q0D) wurtzite cylindrical quan...
The linear optical absorption of an ensemble of semiconductor quantum dots randomly positioned in a...
Phonon modes in spherical GaAs quantum dots (QDs) with up to 11,855 atoms (8 nm in size) are calcula...
CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PE...
Within the framework of the macroscopic dielectric continuum model, the interface-optical-propagatin...
Analytical polar optical phonon states in a wurtzite ZnO-based cylindrical coupling quantum dots (CQ...
The photoluminescence emission by mesoscopic condensed matter is ultimately dictated by the fine-str...
Abstract. The electron and hole polaron energies are found in a quantum dot made of the materials wi...
A theory of photoluminescence in semiconductor quantum dots is developed which relies on two key ing...