We present a theoretical study of the effects of the STM tip on the geometry of Si(100) reconstructed surfaces. The energy barrier to switching between different reconstructions is also discussed. We use a molecular dynamics method and self-consistent forces to simulate the time-dependent behaviour of the surface atoms. The molecular orbital calculations are performed at the CNDO level using a cluster model. Our results indicate significant differences for positively and negatively biased tips. The thermally induced rocking of surface dimers is inhibited by the application of a positive bias to the tip and it is promoted by a negative bias. These bias-dependent effects may offer a plausible explanation for the bias dependence of STM images ...
Scanning tunnelling microscopy provides atomic scale information about surface topography and electr...
Process of reconstruction of Si(111) surface after vapor deposition of thallium and subsequent desor...
Adopting the empirical silicon interatomic potential of Stillinger and Weber, we investigate the eff...
We combine theory and experiments to study bias-dependent scanning tunneling microscopy (STM) images...
In experiments the reconstructed Si(100) surface shows silicon dimers pointing along the [011] direc...
We present a systematic study of the interaction between a silicon tip and a reconstructed Si(100)2×...
Tip-induced modifications of microscopic processes in scanning tunneling microscopy (STM) and atomic...
Using Vary-temperature Scanning Tunnelling Microscopy (VT-STM), the geometric and electronic structu...
Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are exam...
Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are exam...
We present the results of a systematic study of the reconstruction of the Si(100) surface based upon...
The electronic properties of semiconductor surfaces change readily upon changing the carrier densiti...
The fundamental atomic and electronic behaviour of clean silicon surfaces has been studied within a ...
The electronic properties of semiconductor surfaces change readily upon changing the carrier densiti...
Various metastable reconstructions on Si (111) surface, such as 2??2, c2??4, 9??9 and 11??11, were i...
Scanning tunnelling microscopy provides atomic scale information about surface topography and electr...
Process of reconstruction of Si(111) surface after vapor deposition of thallium and subsequent desor...
Adopting the empirical silicon interatomic potential of Stillinger and Weber, we investigate the eff...
We combine theory and experiments to study bias-dependent scanning tunneling microscopy (STM) images...
In experiments the reconstructed Si(100) surface shows silicon dimers pointing along the [011] direc...
We present a systematic study of the interaction between a silicon tip and a reconstructed Si(100)2×...
Tip-induced modifications of microscopic processes in scanning tunneling microscopy (STM) and atomic...
Using Vary-temperature Scanning Tunnelling Microscopy (VT-STM), the geometric and electronic structu...
Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are exam...
Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are exam...
We present the results of a systematic study of the reconstruction of the Si(100) surface based upon...
The electronic properties of semiconductor surfaces change readily upon changing the carrier densiti...
The fundamental atomic and electronic behaviour of clean silicon surfaces has been studied within a ...
The electronic properties of semiconductor surfaces change readily upon changing the carrier densiti...
Various metastable reconstructions on Si (111) surface, such as 2??2, c2??4, 9??9 and 11??11, were i...
Scanning tunnelling microscopy provides atomic scale information about surface topography and electr...
Process of reconstruction of Si(111) surface after vapor deposition of thallium and subsequent desor...
Adopting the empirical silicon interatomic potential of Stillinger and Weber, we investigate the eff...