Antimony semiconductors are materials of future for short and mid infrared emitters and detectors. This work shares information about growth of GaSb, lattice matched InGaAsSb and AlGaAsSb on (100) GaSb substrates in Aixtron Aix-200 MOCVD reactor, assisted by reflectance anisotropy spectroscopy (RAS) measurement
The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epit...
Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure me...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Antimony semiconductors are materials of future for short and mid infrared emitters and detectors. T...
Semiconductors from so called 6.1A group GaSb-InAs-AlSb are having unique features such as high mobi...
Sensing systems for mid-infrared wavelengths (2 to 5 µm) have important applications in biomedical, ...
The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers wer...
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific...
This project involves the growth and optimization of the III-V antimony based materials including In...
Suitability of silicon photodiode detector arrays for monitoring the spectral reflectance during epi...
AlₓGa₁−ₓSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor depositio...
The suitability of the wavelength range provided by silicon photodiode detector arrays for monitorin...
Abstract. GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectr...
International audienceMonolithic Distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quar...
Groups III–V semiconductors have received a great deal of attention because of their potential advan...
The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epit...
Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure me...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Antimony semiconductors are materials of future for short and mid infrared emitters and detectors. T...
Semiconductors from so called 6.1A group GaSb-InAs-AlSb are having unique features such as high mobi...
Sensing systems for mid-infrared wavelengths (2 to 5 µm) have important applications in biomedical, ...
The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers wer...
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific...
This project involves the growth and optimization of the III-V antimony based materials including In...
Suitability of silicon photodiode detector arrays for monitoring the spectral reflectance during epi...
AlₓGa₁−ₓSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor depositio...
The suitability of the wavelength range provided by silicon photodiode detector arrays for monitorin...
Abstract. GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectr...
International audienceMonolithic Distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quar...
Groups III–V semiconductors have received a great deal of attention because of their potential advan...
The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epit...
Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure me...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
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