The concentrations of conduction electrons in n-GaSb at 295 and 77 K have been calculated taking into account the non-parabolic deviation of the conduction band shape. We show that at T = 295 K the concentration of heavy electrons in the L-valley of the conduction band is higher than the concentration of light electrons in the Г-valley. On the contrary, at T = 77 K the conduction electrons are mostly concentrated in the Г-valley. Hall data for tellurium doped CZ n-GaSb specimens have been reported. Analysis of experimental data for T = 295 K requires the existence of two types of electrons be taken into account (the light and the heavy ones), the concentrations of which cannot be determined. The apparent increase in the electron conc...
P-type and n-type GaSb and GA{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrat...
Inspired by the promising thermoelectric properties of phase-separated half-Heusler materials, we in...
The temperature dependences of electrical conductivity (σ), Hall coefficient (R), thermopower (α), a...
The concentrations of conduction electrons in n-GaSb at 295 and 77 K have been calculated taking int...
A theoretical model has been developed for determining free electron concentration in n-GaAs from ch...
The pressure variation of the resistivity of S-, Se-, and Te-doped (n-type) GaSb has been studied to...
The hole transport properties of gallium antimonide with various degrees of tellurium compensation h...
Liquid encapsulated Czochralski grown undoped p-type GaSb samples were studied by temperature-depend...
Dimethyltelluride has been used as a dopant source for GaSb epilayers grown via atmospheric pressure...
Hole mobility and effective Hall factor for p-type GaSb were studied theoretically as a function of ...
Reflectance measurements from 50 to 5000 cm−1 were made at room temperature on several GaSb layers g...
Hole concentration and mobility were investigated by Hall measure-ments in nominally undoped p-type ...
Published Journal Article,The temperature dependent transport characteristics of Pd/n-GaSb:Te Schott...
Published Journal Article,Three prominent electron traps, 0.167 eV, 0.243 eV, and 0.295 eV below the...
Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photolumine...
P-type and n-type GaSb and GA{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrat...
Inspired by the promising thermoelectric properties of phase-separated half-Heusler materials, we in...
The temperature dependences of electrical conductivity (σ), Hall coefficient (R), thermopower (α), a...
The concentrations of conduction electrons in n-GaSb at 295 and 77 K have been calculated taking int...
A theoretical model has been developed for determining free electron concentration in n-GaAs from ch...
The pressure variation of the resistivity of S-, Se-, and Te-doped (n-type) GaSb has been studied to...
The hole transport properties of gallium antimonide with various degrees of tellurium compensation h...
Liquid encapsulated Czochralski grown undoped p-type GaSb samples were studied by temperature-depend...
Dimethyltelluride has been used as a dopant source for GaSb epilayers grown via atmospheric pressure...
Hole mobility and effective Hall factor for p-type GaSb were studied theoretically as a function of ...
Reflectance measurements from 50 to 5000 cm−1 were made at room temperature on several GaSb layers g...
Hole concentration and mobility were investigated by Hall measure-ments in nominally undoped p-type ...
Published Journal Article,The temperature dependent transport characteristics of Pd/n-GaSb:Te Schott...
Published Journal Article,Three prominent electron traps, 0.167 eV, 0.243 eV, and 0.295 eV below the...
Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photolumine...
P-type and n-type GaSb and GA{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrat...
Inspired by the promising thermoelectric properties of phase-separated half-Heusler materials, we in...
The temperature dependences of electrical conductivity (σ), Hall coefficient (R), thermopower (α), a...