We represent how the multiplexing power of near-infrared (NIR) quantum dot (QD) signals can be extended by using narrow NIR absorptive features such as molecular vibration modes and lanthanide f-f electronic transitions. Two distinguishable NIR absorptive films were prepared by using polystyrene and samarium complex, and combined with NIR emitting PbS/CdS Core/Shell QD film to make various NIR emitting codes. Spectral features of NIR emitting codes could be diversified by adjusting the thickness and chemical composition of optical films. © 2023 Korean Chemical Society, Seoul & Wiley-VCH GmbH.11Nsciescopuskc
Photophysical properties of semiconductor quantum dots (QDs), such as broad absorption band and size...
In the present work, we synthesize Near Infrared (NIR)-emitting alloyed mercaptopropionic acid (MPA)...
As quantum dot (QD) synthesis techniques and device architectures advance, it has become increasingl...
Near-infrared (NIR)-emitting PbS-based quantum dots (QDs) and exfoliated layered double hydroxide (L...
Near-infrared (NIR)-emitting PbS-based quantum dots (QDs) and exfoliated layered double hydroxide (L...
aterials that exhibit broadband absorption and emission covering deep ultraviolet (DUV), visible, an...
Quantum dots (QDs) emitting at the second near-infrared region (NIR-II; wavelength = 1000–1700 nm) o...
The quantum dot (QD) is defined as an artificially structured system with the capacity to load elect...
This thesis investigated an advanced material: lead sulfide (PbS) quantum dots (QDs), designed, opti...
Since the electrogenerated chemiluminescence (ECL) of silicon quantum dots (QDs) was reported in 200...
Near-infrared light-emitting diodes (LEDs) show potential for telecommunication and medical applicat...
We report the first observation of three photon induced NIR emission (890-1,400 nm) with NIR excitat...
Förster (or fluorescence) resonance energy transfer amongst semiconductor quantum dots (QDs) is revi...
The electronic characteristics and band gap of quantum dots are closely related to its size and shap...
A simple and robust device structure for a flexible, multicolor infrared (IR) display is described. ...
Photophysical properties of semiconductor quantum dots (QDs), such as broad absorption band and size...
In the present work, we synthesize Near Infrared (NIR)-emitting alloyed mercaptopropionic acid (MPA)...
As quantum dot (QD) synthesis techniques and device architectures advance, it has become increasingl...
Near-infrared (NIR)-emitting PbS-based quantum dots (QDs) and exfoliated layered double hydroxide (L...
Near-infrared (NIR)-emitting PbS-based quantum dots (QDs) and exfoliated layered double hydroxide (L...
aterials that exhibit broadband absorption and emission covering deep ultraviolet (DUV), visible, an...
Quantum dots (QDs) emitting at the second near-infrared region (NIR-II; wavelength = 1000–1700 nm) o...
The quantum dot (QD) is defined as an artificially structured system with the capacity to load elect...
This thesis investigated an advanced material: lead sulfide (PbS) quantum dots (QDs), designed, opti...
Since the electrogenerated chemiluminescence (ECL) of silicon quantum dots (QDs) was reported in 200...
Near-infrared light-emitting diodes (LEDs) show potential for telecommunication and medical applicat...
We report the first observation of three photon induced NIR emission (890-1,400 nm) with NIR excitat...
Förster (or fluorescence) resonance energy transfer amongst semiconductor quantum dots (QDs) is revi...
The electronic characteristics and band gap of quantum dots are closely related to its size and shap...
A simple and robust device structure for a flexible, multicolor infrared (IR) display is described. ...
Photophysical properties of semiconductor quantum dots (QDs), such as broad absorption band and size...
In the present work, we synthesize Near Infrared (NIR)-emitting alloyed mercaptopropionic acid (MPA)...
As quantum dot (QD) synthesis techniques and device architectures advance, it has become increasingl...