Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications

Al/AlN/p-Si diode was fabricated via thermal evaporation. The electrical properties of the structure were examined under various temperatures, illuminations, and frequencies. Temperature-dependent electrical properties were investigated using several different methods, which are the Thermionic Emission theory, Norde Function, and Cheung&Cheung Functions. The ideality factor, zero-bias barrier height, and series resistance values obtained from the Current–Voltage-Temperature plot of the diode were compared with each other. It was seen that the values obtained from three different methods were in good agreement with each other. Additionally, current–voltage measurements depending on the illumination intensity showed that the designed structure responds to light. The time-dependent photocurrent of the structure was examined with the switch on and off. The root mean square value for Aluminium nitride interfacial layer was found to be 4 nm from the Atomic Force Microscope measurements. Experimental results revealed that the fabricated structure is a candidate for sensing applications such as temperature or light sensors