Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices
- Freeland, D.J.
- Ritchie, D.A.
- Xu, Y.B.
- Tselepi, M.
- Guertler, C.M.
- Lee, W.Y.
- Bland, J.A.C.
- Holmes, S.N.
- Patel, N.K.
Publication date
September 1999
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
0018-9464 Language
English Citation count (estimate)
3Abstract
The interface magnetic and electronic properties of two Fe/III-V semiconductor systems, namely Fe/GaAs and Fe/InAs, grown at room temperature have been studied. A "magnetic interface", which is essential for the fabrication of magneto-electronic (ME) devices, was realized in both Fe/GaAs and Fe/InAs systems with suitable substrate processing and growth conditions. Furthermore, Fe/InAs was shown to have favorable interface electronic properties as Fe forms a low resistance ohmic contact on InAs. Two prototypes of ME device based on Fe/InAs are also discussed
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