Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronics properties, is a suitable candidate for transistor and sensor applications. In this research, the electrical transport characteristics of high-performance field effect transistors based on graphene nanoscroll are studied in the framework of analytical modeling. To this end, the characterization of the proposed device is investigated by applying the analytical models of carrier concentration, quantum capacitance, surface potential, threshold voltage, subthreshold slope and drain induced barrier lowering. The analytical modeling starts with deriving carrier concentration and surface potential is modeled by adopting the model of quantum capaci...
Owing to the exceptional electrical properties of different one dimensional (1D) classifications of ...
Single electron transistor (SET) is a fast device with promising features in nanotechnology. Its ope...
Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacki...
Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronic...
For the past decades, researchers indicate that persistent scaling of conventional silicon Metal-Oxi...
A real-space quantum transport simulator for graphenenanoribbon (GNR) metal-oxide-semiconductor fiel...
Graphene, which as a new carbon material shows great potential for a range of applications because o...
The increasing demand for small sized, low power consumption and high processing speeds have always ...
Graphene nanoscrolls (GNSs) as a new category of quasi one-dimensional (1D) belong to the carbon-bas...
This article was published in Micro and Nano Letters [© 2015 Published by The Institution of Enginee...
In this paper we present four simple analytical threshold voltage model for short- channel and lengt...
Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) ...
Graphene nanoscrolls (GNSs) as a new category of quasi one-dimensional (1D) belong to the carbon-bas...
A semiempirical model describing the influence of interface states on characteristics of gate capaci...
Due to its extremely small thickness (0.35 nm), graphene is an intrinsic 2D nanomaterial. As in many...
Owing to the exceptional electrical properties of different one dimensional (1D) classifications of ...
Single electron transistor (SET) is a fast device with promising features in nanotechnology. Its ope...
Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacki...
Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronic...
For the past decades, researchers indicate that persistent scaling of conventional silicon Metal-Oxi...
A real-space quantum transport simulator for graphenenanoribbon (GNR) metal-oxide-semiconductor fiel...
Graphene, which as a new carbon material shows great potential for a range of applications because o...
The increasing demand for small sized, low power consumption and high processing speeds have always ...
Graphene nanoscrolls (GNSs) as a new category of quasi one-dimensional (1D) belong to the carbon-bas...
This article was published in Micro and Nano Letters [© 2015 Published by The Institution of Enginee...
In this paper we present four simple analytical threshold voltage model for short- channel and lengt...
Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) ...
Graphene nanoscrolls (GNSs) as a new category of quasi one-dimensional (1D) belong to the carbon-bas...
A semiempirical model describing the influence of interface states on characteristics of gate capaci...
Due to its extremely small thickness (0.35 nm), graphene is an intrinsic 2D nanomaterial. As in many...
Owing to the exceptional electrical properties of different one dimensional (1D) classifications of ...
Single electron transistor (SET) is a fast device with promising features in nanotechnology. Its ope...
Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacki...