As a one-atom thick, mechanically strong, and chemically stable material with unique electronic properties, graphene can serve as the basis for a large number of applications. One way to tailor its properties is the controlled introduction of covalently bound heteroatoms into the lattice. In this study, we demonstrate efficient implantation of individual gold atoms into graphene up to a concentration of 1.7 x 10(11) atoms cm(-2) via a two-step low-energy ion implantation technique that overcomes the limitation posed by momentum conservation on the mass of the implanted species. Atomic resolution scanning transmission electron microscopy imaging and electron energy-loss spectroscopy reveal gold atoms occupying double vacancy sites in the gra...
Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanom...
Single-atom B or N substitutional doping in single-layer suspended graphene, realized by low-energy ...
ABSTRACT: Doping of graphene via low energy ion implantation could open possibilities for fabricatio...
Recent success in the direct implantation of 74Ge+ ion, the heaviest atomic impurity to date, into m...
Atomic‐resolution transmission electron microscopy was used to identify individual Au9 clusters on a...
Hybrid nanostructures of size-selected nanoparticles (NPs) and 2D materials exhibit striking physica...
Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical...
We present a facile, one-step, and surfactant-free method for direct synthesis and loading of stable...
Multiple methods with distinctive strengths and drawbacks have been devised so far to produce graphe...
Bulk gold's attributes of relative chemical inertness, rarity, relatively low melting point and its ...
Bulk gold's attributes of relative chemical inertness, rarity, relatively low melting point and its ...
Graphene nanosheets were prepared using a modified Hummer's method, and Au-graphene nanocomposites w...
One of the keys behind the success of modern semiconductor technology has been the ion implantation ...
We show how Gd based metallofullerene (Gd3N@C80) molecules can be used to create single adatoms and ...
Trabajo presentado en la conferencia Fuerzas y Túnel (FyT2014), celebrada en San Sebastián del 27 al...
Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanom...
Single-atom B or N substitutional doping in single-layer suspended graphene, realized by low-energy ...
ABSTRACT: Doping of graphene via low energy ion implantation could open possibilities for fabricatio...
Recent success in the direct implantation of 74Ge+ ion, the heaviest atomic impurity to date, into m...
Atomic‐resolution transmission electron microscopy was used to identify individual Au9 clusters on a...
Hybrid nanostructures of size-selected nanoparticles (NPs) and 2D materials exhibit striking physica...
Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical...
We present a facile, one-step, and surfactant-free method for direct synthesis and loading of stable...
Multiple methods with distinctive strengths and drawbacks have been devised so far to produce graphe...
Bulk gold's attributes of relative chemical inertness, rarity, relatively low melting point and its ...
Bulk gold's attributes of relative chemical inertness, rarity, relatively low melting point and its ...
Graphene nanosheets were prepared using a modified Hummer's method, and Au-graphene nanocomposites w...
One of the keys behind the success of modern semiconductor technology has been the ion implantation ...
We show how Gd based metallofullerene (Gd3N@C80) molecules can be used to create single adatoms and ...
Trabajo presentado en la conferencia Fuerzas y Túnel (FyT2014), celebrada en San Sebastián del 27 al...
Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanom...
Single-atom B or N substitutional doping in single-layer suspended graphene, realized by low-energy ...
ABSTRACT: Doping of graphene via low energy ion implantation could open possibilities for fabricatio...