International audienceWe report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/La 1/3 Ca 2/3 MnO 3 /n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current–voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding 10 4 s and 70 cycles, respectively. We rationalize our experimental o...
Correlated manganite films exhibit functional transport properties due to the co-existence of the co...
Author name used in this publication: C. W. Leung2008-2009 > Academic research: refereed > Publicati...
The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr<sub>0.7</sub>Ca...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
We report on non-volatile memory devices based on multifunctional manganites. The electric field ind...
We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices.We de...
Bipolar resistive switching in low cost n-Si/La2/3Ca1/3MnO3/M (M¼TiþCu) devices was investigated. Fo...
We have investigated the role of the electroforming process in the establishment of resistive switch...
As the current memory technology will reach its physical limit within the next decades, innovative c...
As the current memory technology will reach its physical limit within the next decades, innovative c...
As the current memory technology will reach its physical limit within the next decades, innovative c...
Correlated manganite films exhibit functional transport properties due to the co-existence of the co...
Author name used in this publication: C. W. Leung2008-2009 > Academic research: refereed > Publicati...
The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr<sub>0.7</sub>Ca...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
International audienceWe report on non-volatile memory devices based on multifunctional manganites. ...
We report on non-volatile memory devices based on multifunctional manganites. The electric field ind...
We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices.We de...
Bipolar resistive switching in low cost n-Si/La2/3Ca1/3MnO3/M (M¼TiþCu) devices was investigated. Fo...
We have investigated the role of the electroforming process in the establishment of resistive switch...
As the current memory technology will reach its physical limit within the next decades, innovative c...
As the current memory technology will reach its physical limit within the next decades, innovative c...
As the current memory technology will reach its physical limit within the next decades, innovative c...
Correlated manganite films exhibit functional transport properties due to the co-existence of the co...
Author name used in this publication: C. W. Leung2008-2009 > Academic research: refereed > Publicati...
The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr<sub>0.7</sub>Ca...