Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots

Erbium-doped silicon (Er-doped Si) materials hold great potential for advancing Si photonic devices. For Er-doped Si, the efficiency of energy transfer (ηET) from Si to Er3+ is crucial. In order to achieve high ηET, we used nonthermal plasma to synthesize Si quantum dots (QDs) hyperdoped with Er at the concentration of ~1% (i.e., ~5 × 1020 cm−3). The QD surface was subsequently modified by hydrosilylation using 1-dodecene. The Er-hyperdoped Si QDs emitted near-infrared (NIR) light at wavelengths of ~830 and ~1540 nm. An ultrahigh ηET (~93%) was obtained owing to the effective energy transfer from Si QDs to Er3+, which led to the weakening of the NIR emission at ~830 nm and the enhancement of the NIR emission at ~1540 nm. The coupling constant (γ) between Si QDs and Er3+ was comparable to or greater than 1.8 × 10−12 cm3·s−1. The temperature-dependent photoluminescence and excitation rate of Er-hyperdoped Si QDs indicate that strong coupling between Si QDs and Er3+ allows Er3+ to be efficiently excited