The strong demand of the electronics industry in terms of power levels and high frequencies has strongly encouraged the development of gallium nitride (GaN) HEMT technology. However, despite the efforts made on thermal optimization of these devices by using high performance substrates such as SiC, the degradation of the electrical performance resulting from the self-heating of the transistor in the epitaxial layers of the device during its operation remains a major problem. In this work, we focused on the transient thermal in these power devices. Our work was twofold. On the one hand, using numerical simulation, we have studied theoretically the time constants involved, insisting on the influence of the GaN layer and the SiC substrate, but ...
Semiconductor power devices play a key role in power electronics for the conversion, process and con...
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditiona...
GaN HEMT thermal characteristics evaluation using computer calculation has been carry out. Calculati...
"There is a fundamental need for improved hardware efficiency to enable the next generation of mobil...
An experimental method to measure the gate metal temperature of GaN-based HEMTs is demonstrated. The...
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing ...
International audienceTwo electrical methods and one optical method are used, in order to measure th...
Les composants HEMTs (High Electron Mobility Transistors) à base d’AlGaN/GaN sont à ce jour les cand...
In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we develo...
Abstract: High-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs) requires effi...
At the moment, AlGaN/GaN HEMTs (High Electron Mobility Transistors) are the most promising for high-...
Gallium nitride (GaN) based electronics have shown great potential for RF devices and power electron...
Nowadays, with the increase in the power and transistor density of microelectronic devices, the work...
Le développement de composants de puissance pour les applications hyperfréquence représente un formi...
Self-heating is one of the major issues of the existing gallium nitride (GaN) high electron mobility...
Semiconductor power devices play a key role in power electronics for the conversion, process and con...
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditiona...
GaN HEMT thermal characteristics evaluation using computer calculation has been carry out. Calculati...
"There is a fundamental need for improved hardware efficiency to enable the next generation of mobil...
An experimental method to measure the gate metal temperature of GaN-based HEMTs is demonstrated. The...
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing ...
International audienceTwo electrical methods and one optical method are used, in order to measure th...
Les composants HEMTs (High Electron Mobility Transistors) à base d’AlGaN/GaN sont à ce jour les cand...
In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we develo...
Abstract: High-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs) requires effi...
At the moment, AlGaN/GaN HEMTs (High Electron Mobility Transistors) are the most promising for high-...
Gallium nitride (GaN) based electronics have shown great potential for RF devices and power electron...
Nowadays, with the increase in the power and transistor density of microelectronic devices, the work...
Le développement de composants de puissance pour les applications hyperfréquence représente un formi...
Self-heating is one of the major issues of the existing gallium nitride (GaN) high electron mobility...
Semiconductor power devices play a key role in power electronics for the conversion, process and con...
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditiona...
GaN HEMT thermal characteristics evaluation using computer calculation has been carry out. Calculati...