International audienceAtom probe tomography (APT) correlated with optical spectroscopy has yielded original results in the domain of semiconductor nanoscale heterostructures. Statistical correlation (i.e., microscopy correlated with spectroscopy performed on macroscopic samples) has opened the way to a deeper understanding of carrier localization and recombination mechanisms in quantum-well systems. However, photoluminescence spectroscopy (PL) can be performed even on APT samples fabricated by focused ion beam, making it possible to perform sequential correlations on a single nanoscale object, which allows for a higher precision and accuracy. Finally, the laser pulse used for triggering the evaporation in laser-assisted APT can also generat...
A single nanoscale object containing a set of InGaN/GaN nonpolar multiple-quantum wells has been ana...
International audienceAtom probe tomography (APT) has been successfully used in materials science fo...
Atom probe tomography (APT) is an atomic scale materials characterisation technique. Utilising high-...
International audienceAtom probe tomography (APT) correlated with optical spectroscopy has yielded o...
International audienceAtom Probe Tomography (APT) is a microscopy technique allowing for the 3D reco...
International audienceLaser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe...
International audienceAtom probe tomography (APT) is the only approach able to map out the 3D distri...
International audienceA laser assisted tomographic atom probe has recently been designed. The use of...
Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic prin...
In microelectronics, the increase in complexity and the reduction of devices dimensions make essenti...
International audienceDue to the continuous miniaturisation of microelectronic devices, the developm...
International audienceInGaN/GaN nanostructures form the active region of III-nitride emitters (light...
The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis...
A single nanoscale object containing a set of InGaN/GaN nonpolar multiple-quantum wells has been ana...
International audienceAtom probe tomography (APT) has been successfully used in materials science fo...
Atom probe tomography (APT) is an atomic scale materials characterisation technique. Utilising high-...
International audienceAtom probe tomography (APT) correlated with optical spectroscopy has yielded o...
International audienceAtom Probe Tomography (APT) is a microscopy technique allowing for the 3D reco...
International audienceLaser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe...
International audienceAtom probe tomography (APT) is the only approach able to map out the 3D distri...
International audienceA laser assisted tomographic atom probe has recently been designed. The use of...
Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic prin...
In microelectronics, the increase in complexity and the reduction of devices dimensions make essenti...
International audienceDue to the continuous miniaturisation of microelectronic devices, the developm...
International audienceInGaN/GaN nanostructures form the active region of III-nitride emitters (light...
The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis...
A single nanoscale object containing a set of InGaN/GaN nonpolar multiple-quantum wells has been ana...
International audienceAtom probe tomography (APT) has been successfully used in materials science fo...
Atom probe tomography (APT) is an atomic scale materials characterisation technique. Utilising high-...