Ge content optimization in Ge(SbSe)$_{1-x}$N OTS materials for selector applications

International audienceIn this paper, we investigate the influence of germanium content in GeSbSeN based Ovonic Threshold Selector (OTS) devices. We performed physico-chemical analyses on five different Ge x (SbSe) 1-x N alloys in order to understand how the germanium content influences the material structure and its integrity once submitted to temperatures up to 400° C. Thanks to electrical characterization of Ge x (SbSe)$_{1-x}$N OTS devices, we analyze the evolution of the electrical parameters along cycling up to 10$^8$ cycles and before and after annealing at 400° C. Cycle-to-cycle variability and drift phenomenon are also investigated. Finally, we demonstrate how Ge content should be properly tuned in order to improve the thermal stability of the alloy without affecting the leakage current and the electrical parameters variability