Add to ORKGApplying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1-xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1-xSnx optoelectronic devices into the mid-infrared range
Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-depo...
Over the last decades, silicon-based integrated circuits underpinned information technology. To keep...
Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-depo...
Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germaniu...
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted wi...
Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into m...
We will introduce our Ge1-xSnx epitaxial growth process and we will illustrate its material quality ...
We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn) photodetecto...
The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron grating...
This letter presents the epitaxial growth and characterization of a heterostructure for an electrica...
In recent years much effort has been made to increase the Sn content in GeSn alloys in order to incr...
International audienceAdding Tin (Sn) to Germanium (Ge) can turn it into a direct bandgap group IV s...
The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron gratings ...
GeSn materials have attracted considerable attention for their tunable band structures and high carr...
We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn lay...
Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-depo...
Over the last decades, silicon-based integrated circuits underpinned information technology. To keep...
Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-depo...
Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germaniu...
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted wi...
Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into m...
We will introduce our Ge1-xSnx epitaxial growth process and we will illustrate its material quality ...
We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn) photodetecto...
The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron grating...
This letter presents the epitaxial growth and characterization of a heterostructure for an electrica...
In recent years much effort has been made to increase the Sn content in GeSn alloys in order to incr...
International audienceAdding Tin (Sn) to Germanium (Ge) can turn it into a direct bandgap group IV s...
The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron gratings ...
GeSn materials have attracted considerable attention for their tunable band structures and high carr...
We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn lay...
Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-depo...
Over the last decades, silicon-based integrated circuits underpinned information technology. To keep...
Silicon nitride stressor layers deposited by inductively coupled plasma-enhanced-chemical-vapor-depo...