Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterizedthin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. Byhigh-resolution scanning transmission electron microscopy (STEM) of epitaxial single crystal (001)-oriented TiN films, we identify different dislocation types and their core structures. These include, besidesthe expected primary a/2{110}h110i dislocation, Shockley partial dislocations a/6{111}h112i and sessileLomer edge dislocations a/2{100}h011i. Density-functional theory and classical interatomic potentialsimulations complement STEM observations by recovering the atomic structure of the different disloca-tion types, estimating Peierls stresse...
How the core structure of an interface dislocation network depends on both misfit and bond strength ...
We have studied three-dimensional (3D) configurations of dislocations in the β phase of a Ti-35mass%...
The lattice-misfit InN/GaN (0001) interface supports a triangular network of alpha-core 90 degrees p...
Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterizedth...
Threading dislocation core structures in c-plane GaN and InₓGa₁₋ₓN (0.057 ≤ x ≤ 0.20) films were inv...
The main thrust of the research presented in this thesis is atomistic studies of dislocations in cry...
The main theme of this thesis is development of potentials that are a necessary precursor for comput...
This dissertation contains a variety of atomistic calculations concerning screw dislocations in pure...
cited By 31International audienceThe ease of a metal to deform plastically in selected crystallograp...
Hard refractory transition-metal nitrides possess unique combinations of outstanding mechanical and ...
The III-nitride semiconductor materials system is used in thin-film-based optoelectronic devices. Ga...
Aberration-corrected scanning transmission electron microscopy was used to investigate the core stru...
Large-scale classical molecular dynamics simulations of epitaxial TiN/TiN(001) thin film growth at 1...
The elastic properties and electronic structure of interfaces in Ti–Si–N nanocomposite films were ca...
Interaction between gliding dislocations and twin boundaries affects the plastic deformation of hcp ...
How the core structure of an interface dislocation network depends on both misfit and bond strength ...
We have studied three-dimensional (3D) configurations of dislocations in the β phase of a Ti-35mass%...
The lattice-misfit InN/GaN (0001) interface supports a triangular network of alpha-core 90 degrees p...
Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterizedth...
Threading dislocation core structures in c-plane GaN and InₓGa₁₋ₓN (0.057 ≤ x ≤ 0.20) films were inv...
The main thrust of the research presented in this thesis is atomistic studies of dislocations in cry...
The main theme of this thesis is development of potentials that are a necessary precursor for comput...
This dissertation contains a variety of atomistic calculations concerning screw dislocations in pure...
cited By 31International audienceThe ease of a metal to deform plastically in selected crystallograp...
Hard refractory transition-metal nitrides possess unique combinations of outstanding mechanical and ...
The III-nitride semiconductor materials system is used in thin-film-based optoelectronic devices. Ga...
Aberration-corrected scanning transmission electron microscopy was used to investigate the core stru...
Large-scale classical molecular dynamics simulations of epitaxial TiN/TiN(001) thin film growth at 1...
The elastic properties and electronic structure of interfaces in Ti–Si–N nanocomposite films were ca...
Interaction between gliding dislocations and twin boundaries affects the plastic deformation of hcp ...
How the core structure of an interface dislocation network depends on both misfit and bond strength ...
We have studied three-dimensional (3D) configurations of dislocations in the β phase of a Ti-35mass%...
The lattice-misfit InN/GaN (0001) interface supports a triangular network of alpha-core 90 degrees p...