Electronic devices are sensitive to environmental conditions, the most well studied of these parameters being temperature, leading to the need for full characterisation to determine any environmental dependencies. Memristors are a new class of two-terminal metal-insulator-metal device that show great promise in applications such as high density data storage and physical neural networks. Being a new class of device, with many different combinations of materials means that a method and system for rapidly characterising the environmental dependencies of these devices needs to be developed. Humidity has been demonstrated to affect the behaviour of some memristors (most notably hafnium based), however, the effects of this on titanium based devic...
Memristive devices are promising elements for energy-efficient neuromorphic computing and future art...
Resistive switching memories based on the formation and dissolution of a metal filament in a simple ...
Flexible solution-processed memristors show different behaviour dependent on the choice of electrode...
Memristors are considered as one of the promising candidates for next-generation computation and sto...
Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volati...
Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on volt...
The memristor and selector devices are the most promising candidates in the research of emerging mem...
In this paper the main goal is to study the principle structure and characteristics of single and mu...
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials p...
Environmental conditions can greatly affect the performance of semiconductor devices. Great sophisti...
The realization of adaptive oxides for neuromorphic computing hinges on repeatable and predicable an...
Supplementary files for article Temperature control of diffusive memristor hysteresis and artificial...
We report temperature dependent electrical characteristics of two-terminal Ag/a-COx/ta-C/Pt memristo...
Memristor is a promising device as a fundamental building block for future unconventional system arc...
Memristors are ideal devices able to switch among different resistive states and to retain the most ...
Memristive devices are promising elements for energy-efficient neuromorphic computing and future art...
Resistive switching memories based on the formation and dissolution of a metal filament in a simple ...
Flexible solution-processed memristors show different behaviour dependent on the choice of electrode...
Memristors are considered as one of the promising candidates for next-generation computation and sto...
Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volati...
Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on volt...
The memristor and selector devices are the most promising candidates in the research of emerging mem...
In this paper the main goal is to study the principle structure and characteristics of single and mu...
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials p...
Environmental conditions can greatly affect the performance of semiconductor devices. Great sophisti...
The realization of adaptive oxides for neuromorphic computing hinges on repeatable and predicable an...
Supplementary files for article Temperature control of diffusive memristor hysteresis and artificial...
We report temperature dependent electrical characteristics of two-terminal Ag/a-COx/ta-C/Pt memristo...
Memristor is a promising device as a fundamental building block for future unconventional system arc...
Memristors are ideal devices able to switch among different resistive states and to retain the most ...
Memristive devices are promising elements for energy-efficient neuromorphic computing and future art...
Resistive switching memories based on the formation and dissolution of a metal filament in a simple ...
Flexible solution-processed memristors show different behaviour dependent on the choice of electrode...