Add to ORKGInternational audienceThe growing interest in new concepts of III-V/Si tandem solar cells arises from the need to reduce the cost of high efficiencyIII-V based multi-junctions by using low cost substrates such as silicon. Because it is still a challenge to grow III-V materials directlyonto Si wafers due to thermal expansion and lattice mismatch issues, other ways of combining III-V compounds and Si have beendeveloped. Among them is the reversed metamorphic concept recently proposed by Cariou et al.. In the latter approach, the Si bottomcell is deposited by low temperature PECVD (<200°C) directly on the III-V top-cell, preventing the degradation of the electricalproperties of the underlying III-V layers grown by MOVPE. Though the possibility...