International audienceThe lattice parameters of epitaxial barium strontium titanate films with various thicknesses (from 6 to 960 nm) were measured as a function of temperature in the normal and tangential directions with respect to the film plane using x-ray diffraction. The films were grown through the layer-by-layer mechanism by rf cathode sputtering under elevated oxygen pressure. A critical film thickness (similar to 50 nm) was found to exist, below and above which the films are subjected to compressive and tensile stresses, respectively. As the temperature varies from 780 to 100 K, the films undergo two diffuse structural phase transitions of the second order over the entire thickness range. The transitions in the films under tensile ...
The impact of anisotropic biaxial strain on the ferroelectric properties of thin oxide films (20-100...
A review is given of ceramic and single-crystal thin film ferroelectric oxides, emphasizing perovski...
Strain can strongly modify the electronic characteristics of oxide materials. For instance the phase...
International audienceThe lattice parameters of epitaxial barium strontium titanate films with vario...
Ba0.5Sr0.5TiO3 (BST) thin-film capacitor structures with various thicknesses, (50–1200 nm) and diff...
International audienceHeteroepitaxial Ba (x) Sr1 - x TiO3 thin films of different thicknesses have b...
The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100nm thick film deposite...
The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films...
Ferroelectric materials generate much current interest due to their large amount of potential appli-...
International audienceIn about twenty years, the temperature-misfit strain phase diagrams have becom...
We have studied the effects of strain and substrate constraint on structural phase transitions of pe...
The structural evolution of epitaxial monodomain (only 180° domains) ferroelectric PbTiO3 thin film ...
The impact of anisotropic biaxial strain on the ferroelectric properties of thin oxide films (20-100...
Barium titanate (BaTiO3) thin films have been prepared by electrophoretic deposition on p-doped and ...
Nanoscale ferroelectric ceramics are promising materials for the development of miniaturized compone...
The impact of anisotropic biaxial strain on the ferroelectric properties of thin oxide films (20-100...
A review is given of ceramic and single-crystal thin film ferroelectric oxides, emphasizing perovski...
Strain can strongly modify the electronic characteristics of oxide materials. For instance the phase...
International audienceThe lattice parameters of epitaxial barium strontium titanate films with vario...
Ba0.5Sr0.5TiO3 (BST) thin-film capacitor structures with various thicknesses, (50–1200 nm) and diff...
International audienceHeteroepitaxial Ba (x) Sr1 - x TiO3 thin films of different thicknesses have b...
The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100nm thick film deposite...
The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films...
Ferroelectric materials generate much current interest due to their large amount of potential appli-...
International audienceIn about twenty years, the temperature-misfit strain phase diagrams have becom...
We have studied the effects of strain and substrate constraint on structural phase transitions of pe...
The structural evolution of epitaxial monodomain (only 180° domains) ferroelectric PbTiO3 thin film ...
The impact of anisotropic biaxial strain on the ferroelectric properties of thin oxide films (20-100...
Barium titanate (BaTiO3) thin films have been prepared by electrophoretic deposition on p-doped and ...
Nanoscale ferroelectric ceramics are promising materials for the development of miniaturized compone...
The impact of anisotropic biaxial strain on the ferroelectric properties of thin oxide films (20-100...
A review is given of ceramic and single-crystal thin film ferroelectric oxides, emphasizing perovski...
Strain can strongly modify the electronic characteristics of oxide materials. For instance the phase...