International audienceAs a promising and alternative solar absorber material, the Cu2ZnSnS4 (CZTS) has gained a broad interest over recent years due to its excellent material properties such as suitable and tunable band gap energy of 1.4–1.6 eV and absorption coefficient over 104 cm−1 (Jimbo et al. in Thin Solid Films 515(15)5997–5999, 2007; Katagiri et al. in Sol Energy Mater Sol Cells 65(1–4)141–148, 2001). In addition, all components of the CZTS are naturally abundant and non toxic. Nowadays solution based-approaches are being developed for the deposition of CZTS to overcome the problem of expensive and complicated vacuum-based methods. In this work, we report the study of properties of the novel wurtzite CZTS material prepared by sol–ge...
In this study, the effect of sulfurization temperature on the morphology, composition and structure ...
Thin film solar cells based on the p-type semiconductor Cu2ZnSnS4 (CZTS) have emerged as next-genera...
Cu2ZnSnS4 (CZTS) thin films were deposited using the cosputtering technique. The growth parameters, ...
International audienceAs a promising and alternative solar absorber material, the Cu2ZnSnS4 (CZTS) h...
International audienceAs a promising and alternative solar absorber material, the Cu2ZnSnS4 (CZTS) h...
International audienceAs a promising and alternative solar absorber material, the Cu2ZnSnS4 (CZTS) h...
Thermally evaporated Cu2Zn1.5Sn1.2S4.4 (CZTS) films are annealed and sulfurized at different tempera...
Thermally evaporated Cu2Zn1.5Sn1.2S4.4 (CZTS) films are annealed and sulfurized at different tempera...
The kesterite Cu2ZnSnS4 (CZTS) is considered as a possible absorber layer in future photovoltaic (PV...
Thin films of Cu2ZnSnS4 (CZTS) have been deposited on top of glass substrates using spray pyrolysis ...
Cu2ZnSnS4 (CZTS) semiconductor is rapidly emerging as the best absorber layer for next generation so...
For the synthesis of an absorber crystalline layer of the solar cell device, the Cu2ZnSnS4 (CZTS) ab...
Cu2ZnSnS4 (CZTS) absorbers have been grown on Mo-coated glass substrates by the rapid thermal proces...
Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin films were prepared by solid-state sulfurizing Cu-Zn-Sn(...
Recently Cu2ZnSnS4, i.e. Copper Zinc Tin Sulphide (CZTS), has emerged as a potential candidate for l...
In this study, the effect of sulfurization temperature on the morphology, composition and structure ...
Thin film solar cells based on the p-type semiconductor Cu2ZnSnS4 (CZTS) have emerged as next-genera...
Cu2ZnSnS4 (CZTS) thin films were deposited using the cosputtering technique. The growth parameters, ...
International audienceAs a promising and alternative solar absorber material, the Cu2ZnSnS4 (CZTS) h...
International audienceAs a promising and alternative solar absorber material, the Cu2ZnSnS4 (CZTS) h...
International audienceAs a promising and alternative solar absorber material, the Cu2ZnSnS4 (CZTS) h...
Thermally evaporated Cu2Zn1.5Sn1.2S4.4 (CZTS) films are annealed and sulfurized at different tempera...
Thermally evaporated Cu2Zn1.5Sn1.2S4.4 (CZTS) films are annealed and sulfurized at different tempera...
The kesterite Cu2ZnSnS4 (CZTS) is considered as a possible absorber layer in future photovoltaic (PV...
Thin films of Cu2ZnSnS4 (CZTS) have been deposited on top of glass substrates using spray pyrolysis ...
Cu2ZnSnS4 (CZTS) semiconductor is rapidly emerging as the best absorber layer for next generation so...
For the synthesis of an absorber crystalline layer of the solar cell device, the Cu2ZnSnS4 (CZTS) ab...
Cu2ZnSnS4 (CZTS) absorbers have been grown on Mo-coated glass substrates by the rapid thermal proces...
Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin films were prepared by solid-state sulfurizing Cu-Zn-Sn(...
Recently Cu2ZnSnS4, i.e. Copper Zinc Tin Sulphide (CZTS), has emerged as a potential candidate for l...
In this study, the effect of sulfurization temperature on the morphology, composition and structure ...
Thin film solar cells based on the p-type semiconductor Cu2ZnSnS4 (CZTS) have emerged as next-genera...
Cu2ZnSnS4 (CZTS) thin films were deposited using the cosputtering technique. The growth parameters, ...