International audienceOne of the main problem for the realization of high reflectivity GaN-based Bragg mirrors operating in the near-UV wavelength range is to limit the crack formation due to the lattice mismatch between the different nitride compounds while keeping a large refractive index contrast. Recent works have demonstrated that the introduction of several AlN/GaN superlattices (SLs) in a classical AlN/GaN quarter wavelength layers mirror structure strongly improved the crystalline quality and therefore the optical properties of such a mirror. In this work, several AlN/GaN SLs were studied for their direct use as pseudo-alloy layers pair material in a Bragg mirror. Such a configuration should allow combining the limitation of cracks ...
The deposition of group III nitrides still faces unsolved challenges concerning stress and strain of...
International audienceTowards the development of high efficient GaN-based Vertical Cavity devices, t...
The deposition of group III nitrides still faces unsolved challenges concerning stress and strain of...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceTowards the development of high efficient GaN-based Vertical Cavity devices, t...
The deposition of group III nitrides still faces unsolved challenges concerning stress and strain of...
International audienceTowards the development of high efficient GaN-based Vertical Cavity devices, t...
The deposition of group III nitrides still faces unsolved challenges concerning stress and strain of...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceOne of the main problem for the realization of high reflectivity GaN-based Bra...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceAlGaN/GaN materials family is one of the best solution to achieve near-UV high...
International audienceTowards the development of high efficient GaN-based Vertical Cavity devices, t...
The deposition of group III nitrides still faces unsolved challenges concerning stress and strain of...
International audienceTowards the development of high efficient GaN-based Vertical Cavity devices, t...
The deposition of group III nitrides still faces unsolved challenges concerning stress and strain of...