Multilayer structure in SeAsGeSi-based OTS for high thermal stability and reliability enhancement
- Laguna, C.
- Bernard, M.
- Garrione, J.
- Castellani, N.
- Meli, V.
- Martin, S.
- Aussenac, F.
- Rouchon, D.
- Rochat, N.
- Nolot, E.
- Bourgeois, G.
- Cyrille, M.
- Militaru, L.
- Souifi, A.
- Andrieu, F.
- Navarro, Gabriele
Publication date
September 2022
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceIn this paper, we present an innovative Multilayer SeAsGeSi-based Ovonic Threshold Switching (OTS) Selector targeting high reliability for Crossbar arrays. We compare ourMultilayer (ML) OTS with SeAsGeSi-based bulk alloy (SAGS). We demonstrate the high thermal stability of the ML stack against the Back-End-of-Line (BEOL) thermal budget as well as the reduction of the device-to-device variability and reliable switching operations up to 300°C. We study by Raman and FTIR spectroscopy the integrity of the ML OTS material after an annealing of 3 hours at 400°C. SeAsGeSi Multilayer OTS delays crystallization mechanism along cycling. We finally report the successful co-integration of our ML with Phase-Change Memory technolog
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