Experimental study of thermal coupling effects in FD-SOI MOSFET

This work studies the thermal cross-coupling between two side-by-side FD-SOI MOSFETs separated by two different spacings. Through DC measurements, the temperature increase experienced by a device due to the self-heating of a neighbor one is estimated by making a comparison with hot chuck measurements. The degradation of electrical parameters caused by the operation (i.e. heating) of the neighbor device is also analyzed as a function of the bias applied to (i.e. power dissipated by) the neighbor device