Zinc oxide (ZnO) nanorods (NRs) oriented along the crystallographic [001] axis are grown by the hydrothermal method on glass substrates. The ZnO NRs exhibit a broadband (1–2 µm) near-IR absorption ascribed to the singly charged zinc vacancy VZn−1. The saturable absorption of the ZnO NRs is studied at ≈1 µm under picosecond excitation, revealing a low saturation intensity, ≈10 kW/cm2, and high fraction of the saturable losses. The ZnO NRs are applied as saturable absorbers in diode-pumped Yb (≈1.03 µm) and Tm (≈1.94 µm) lasers generating nanosecond pulses. The ZnO NRs grown on various optical surfaces are promising broadband saturable absorbers for nanosecond near-IR lasers in bulk and waveguide geometries
The Raman and photoluminescence (PL) spectra of nanocrystalline zinc oxide produced by mechanochemic...
ZnO, due to its large exciton binding energy which enables excitonic recombination at room temperatu...
8 figures.-- Supplementary information available.The controlled modification of the electronic prope...
Zinc oxide (ZnO) nanorods (NRs) oriented along the crystallographic [001] axis are grown by the hydr...
Room-temperature ultraviolet lasing in [0001] oriented zinc oxide nanorods grown on silicon and fuse...
ZnO nanorods, with a wide band gap of 3.37 eV have been attracting much attention due to its wide ra...
Zinc oxide (ZnO) nanorods have been extensively investigated, owing to their extraordinary applicati...
Multiphoton-absorption (MPA) induced ultraviolet (UV) luminescence of ZnO nanorods grown by vapor ph...
Multiphoton-absorption (MPA) induced ultraviolet (UV) luminescence of ZnO nanorods grown by vapor ph...
Multiphoton-absorption (MPA) induced ultraviolet (UV) luminescence of ZnO nanorods grown by vapor ph...
ZnO nanowires, nanorods and microrods have been prepared by an organic-free hydrothermal process usi...
Zinc oxide (ZnO) is a well-studied wide band gap (~3.37 eV) n-type semiconductor material with signi...
The electronic version of this article is the complete one and can be found online at: http://link.s...
We report on the coupling of ZnO nanoparticles with plasmonic gold nanoislands in a solution process...
Vertically aligned, highly ordered, large area arrays of nanostructures are important building block...
The Raman and photoluminescence (PL) spectra of nanocrystalline zinc oxide produced by mechanochemic...
ZnO, due to its large exciton binding energy which enables excitonic recombination at room temperatu...
8 figures.-- Supplementary information available.The controlled modification of the electronic prope...
Zinc oxide (ZnO) nanorods (NRs) oriented along the crystallographic [001] axis are grown by the hydr...
Room-temperature ultraviolet lasing in [0001] oriented zinc oxide nanorods grown on silicon and fuse...
ZnO nanorods, with a wide band gap of 3.37 eV have been attracting much attention due to its wide ra...
Zinc oxide (ZnO) nanorods have been extensively investigated, owing to their extraordinary applicati...
Multiphoton-absorption (MPA) induced ultraviolet (UV) luminescence of ZnO nanorods grown by vapor ph...
Multiphoton-absorption (MPA) induced ultraviolet (UV) luminescence of ZnO nanorods grown by vapor ph...
Multiphoton-absorption (MPA) induced ultraviolet (UV) luminescence of ZnO nanorods grown by vapor ph...
ZnO nanowires, nanorods and microrods have been prepared by an organic-free hydrothermal process usi...
Zinc oxide (ZnO) is a well-studied wide band gap (~3.37 eV) n-type semiconductor material with signi...
The electronic version of this article is the complete one and can be found online at: http://link.s...
We report on the coupling of ZnO nanoparticles with plasmonic gold nanoislands in a solution process...
Vertically aligned, highly ordered, large area arrays of nanostructures are important building block...
The Raman and photoluminescence (PL) spectra of nanocrystalline zinc oxide produced by mechanochemic...
ZnO, due to its large exciton binding energy which enables excitonic recombination at room temperatu...
8 figures.-- Supplementary information available.The controlled modification of the electronic prope...