RuAl thin films possess a high potential as a high temperature stable metallization for surface acoustic wave devices. During the annealing process of the Ru-Al films, Al2O3 is formed at the surface of the films even under high vacuum conditions, so that the composition of a deposited Ru50Al50 film is shifted to a Ru-rich alloy. To compensate for this effect, the Al content is systematically increased during the deposition of the Ru-Al films. Three Al-rich alloys—Ru45Al55, Ru40Al60 and Ru33Al67—were analyzed concerning their behavior after high temperature treatment under high vacuum and air conditions in comparison to the initial Ru50Al50 sample. Although the films’ cross sections show a more homogeneous structure in the case of the Al-ric...
The growth of Al–Mg–B thin films on SiO2/Si(100) substrates was performed by nanosecond pulsed laser...
Funding Information: This work was carried out within the MECHALD project funded by Business Finland...
SrRuO3 (SRO) is a promising electrode material for the next-generation dynamic random access memory ...
RuAl thin films possess a high potential as a high temperature stable metallization for surface acou...
This paper reports on a significant further improvement of the high temperature stability of RuAl th...
Ru-riched and equiatomic Ru–Al multilayered thin films were fabricated on Si and Inconel 617 s...
RuAl shows a high melting point, good ductility at room temperature and excellent oxidation resistan...
Substrate materials that are high-temperature stable are essential for sensor devices which are appl...
Ruthenium (Ru) is regarded as an electrode candidate on ultrahigh-k SrTiO3 dielectric films for futu...
RuAl and NiAl thin films on SiO2/Si were oxidized, and the results were compared to those from alumi...
textWhen the ever-shrinking microelectronic device dimensions scale below 100 nm, introducing new m...
In this study, we report on phase formation and microstructure evolution in multiscale magnetron spu...
High-density ruthenium (Ru) thin films were deposited using Ru(EtCp)2 (bis(ethylcyclopentadienyl)rut...
Ti/Al multilayer films with a total thickness of 200 nm were deposited on the high-temperature (HT) ...
Developing advanced thin film materials is the key challenge in high-temperature applications of sur...
The growth of Al–Mg–B thin films on SiO2/Si(100) substrates was performed by nanosecond pulsed laser...
Funding Information: This work was carried out within the MECHALD project funded by Business Finland...
SrRuO3 (SRO) is a promising electrode material for the next-generation dynamic random access memory ...
RuAl thin films possess a high potential as a high temperature stable metallization for surface acou...
This paper reports on a significant further improvement of the high temperature stability of RuAl th...
Ru-riched and equiatomic Ru–Al multilayered thin films were fabricated on Si and Inconel 617 s...
RuAl shows a high melting point, good ductility at room temperature and excellent oxidation resistan...
Substrate materials that are high-temperature stable are essential for sensor devices which are appl...
Ruthenium (Ru) is regarded as an electrode candidate on ultrahigh-k SrTiO3 dielectric films for futu...
RuAl and NiAl thin films on SiO2/Si were oxidized, and the results were compared to those from alumi...
textWhen the ever-shrinking microelectronic device dimensions scale below 100 nm, introducing new m...
In this study, we report on phase formation and microstructure evolution in multiscale magnetron spu...
High-density ruthenium (Ru) thin films were deposited using Ru(EtCp)2 (bis(ethylcyclopentadienyl)rut...
Ti/Al multilayer films with a total thickness of 200 nm were deposited on the high-temperature (HT) ...
Developing advanced thin film materials is the key challenge in high-temperature applications of sur...
The growth of Al–Mg–B thin films on SiO2/Si(100) substrates was performed by nanosecond pulsed laser...
Funding Information: This work was carried out within the MECHALD project funded by Business Finland...
SrRuO3 (SRO) is a promising electrode material for the next-generation dynamic random access memory ...