Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks

Surface passivation of germanium is vital for optimal performance of Ge based optoelectronic devices especially considering their rapidly increasing surface-to-volume ratios. In this work, we have investigated the surface passivation of Ge by a stack consisting of a thin layer of hydrogenated amorphous silicon (a-Si:H) and an aluminum oxide (Al2O3) capping layer. Plasma-enhanced chemical vapor deposition was used to deposit the a-Si:H (0–10 nm), while thermal and plasma-enhanced atomic layer deposition (ALD) were employed for the Al2O3 films (0–22 nm). Transient photoconductance decay measurements revealed a recombination velocity as low as 2.7 cm s−1 for an a-Si:H layer as thin as 1.8 nm and an Al2O3 film of only ∼6 nm. In this state-of-the-art passivation scheme, the plasma-enhanced ALD process for the Al2O3 capping layer proved superior to the thermal ALD process since it resulted in an exceptionally high negative fixed charge density (Qf ∼ 1013 cm−2), which proved a key factor for the low surface recombination velocity. Transmission electron microscopy and energy x-ray dispersion revealed that a thin SiOx layer (∼1.4 nm) forms between a-Si:H and Al2O3 during the ALD process, which is thought to be the origin of this high negative fixed charge density. This passivation stack is regarded as highly interesting for applications such as solar cells, nanolasers, and nano-LEDs based on p-type Ge