An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations
International audienceElectrically activated metal-insulator transition (MIT) in vanadium dioxide (V...
The development of new materials and electronic devices which exhibit unique physical properties wil...
In this article, we show that the radio frequency (rf) dynamical characteristics of a very strongly ...
An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electro...
This paper deals with modeling and simulation of a new family of two-terminal devices fabricated wit...
Abstract — This paper deals with modeling and simulation of a new family of two-terminal devices fab...
International audienceNowadays information processing is widely performed by CMOS circuits on the ba...
New computation schemes inspired by biological processes can outperform standard von-Neumann archite...
New computation schemes inspired by biological processes can outperform standard von-Neumann archite...
The frequency of vanadium dioxide (VO2) oscillators is a fundamental figure of merit for the realiza...
Abstract—As complementary metal–oxide–semiconductor (CMOS) scaling continues to offer insurmountable...
In a hardware-based neuromorphic computation system, using emerging nonvolatile memory devices as ar...
Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a ...
Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volati...
Hysteresis effects in ionic-electronic devices are a valuable resource for the development of switch...
International audienceElectrically activated metal-insulator transition (MIT) in vanadium dioxide (V...
The development of new materials and electronic devices which exhibit unique physical properties wil...
In this article, we show that the radio frequency (rf) dynamical characteristics of a very strongly ...
An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electro...
This paper deals with modeling and simulation of a new family of two-terminal devices fabricated wit...
Abstract — This paper deals with modeling and simulation of a new family of two-terminal devices fab...
International audienceNowadays information processing is widely performed by CMOS circuits on the ba...
New computation schemes inspired by biological processes can outperform standard von-Neumann archite...
New computation schemes inspired by biological processes can outperform standard von-Neumann archite...
The frequency of vanadium dioxide (VO2) oscillators is a fundamental figure of merit for the realiza...
Abstract—As complementary metal–oxide–semiconductor (CMOS) scaling continues to offer insurmountable...
In a hardware-based neuromorphic computation system, using emerging nonvolatile memory devices as ar...
Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a ...
Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volati...
Hysteresis effects in ionic-electronic devices are a valuable resource for the development of switch...
International audienceElectrically activated metal-insulator transition (MIT) in vanadium dioxide (V...
The development of new materials and electronic devices which exhibit unique physical properties wil...
In this article, we show that the radio frequency (rf) dynamical characteristics of a very strongly ...