Discontinuity of electrical and thermal conductivity values at melt has been reported in phase change materials. Signatures of the effect are found in phase change memory cells with Wall architecture. A quantitative model describing the dependence on temperature of electrical and thermal conductivity values of the phase change alloy is introduced, covering the range from solid phase to beyond melt. The model has been implemented in a 3-D electro-thermal TCAD tool and successfully validated against the experimental results
A detailed experimental study of drift in PCM devices at different temperatures and with different m...
Phase change memory (PCM) is one of the most promising non-volatile memory technologies in the marke...
Notwithstanding on variety of existing processes of induction skull melting of oxides, electrical an...
Discontinuity of electrical and thermal conductivity values at melt has been reported in phase chang...
I simulate phase change including stochastic nucleation and growth of discrete grains with a finite ...
Previous efforts to model the effectiveness of heat input and extraction from a thermal storage unit...
This Article is brought to you for free and open access by the School of Mathematics a
Phase change memory (PCM) is an important element in the development and realization of new forms of...
Phase change materials, typically composed out of Ge, Sb and Te alloys, are materials that can switc...
In order to increase the overall efficiency of energy use in a community, excess thermal energy from...
Phase change memory (PCM) is one of the most promising emerging non-volatile memory technologies. Th...
The measurement of the crystal growth velocity is carried out by analysing the change in the resisti...
In this study the focus lies on the crystalline phase of phase-change materials. The crystalline pha...
The impact of junction formed by the electrode and bulk in phase change memory to conduction at the ...
Temporal drift of the amorphous resistance in phase-change random access memory (PRAM) is a temperat...
A detailed experimental study of drift in PCM devices at different temperatures and with different m...
Phase change memory (PCM) is one of the most promising non-volatile memory technologies in the marke...
Notwithstanding on variety of existing processes of induction skull melting of oxides, electrical an...
Discontinuity of electrical and thermal conductivity values at melt has been reported in phase chang...
I simulate phase change including stochastic nucleation and growth of discrete grains with a finite ...
Previous efforts to model the effectiveness of heat input and extraction from a thermal storage unit...
This Article is brought to you for free and open access by the School of Mathematics a
Phase change memory (PCM) is an important element in the development and realization of new forms of...
Phase change materials, typically composed out of Ge, Sb and Te alloys, are materials that can switc...
In order to increase the overall efficiency of energy use in a community, excess thermal energy from...
Phase change memory (PCM) is one of the most promising emerging non-volatile memory technologies. Th...
The measurement of the crystal growth velocity is carried out by analysing the change in the resisti...
In this study the focus lies on the crystalline phase of phase-change materials. The crystalline pha...
The impact of junction formed by the electrode and bulk in phase change memory to conduction at the ...
Temporal drift of the amorphous resistance in phase-change random access memory (PRAM) is a temperat...
A detailed experimental study of drift in PCM devices at different temperatures and with different m...
Phase change memory (PCM) is one of the most promising non-volatile memory technologies in the marke...
Notwithstanding on variety of existing processes of induction skull melting of oxides, electrical an...