The structure of thin terminated Bi(1 1 1) films of approximately 1nm thickness is investigated from first principles. Our density functional theory calculations show that covalent bonds to the surface can change the orientation of the films completely. For thicker films, the effect is limited to the surface only. Based on these observations, we further present a simple model structure for the native oxide and chemically similar oxides, which form a protective capping layer, leaving the orientation of the films unchanged. The advantages of this energetically favorable layered termination are discussed in the context of the films' technological exploitation in nanoelectronic devices
textMiniaturization, continued scaling and cost reduction in microelectronic devices are goals bein...
Few layer bismuth nanofilms with (111) orientation have shown striking electronic properties, especi...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 2002.Includes bibliographic...
The structure of thin terminated Bi(1 1 1) films of approximately 1nm thickness is investigated from...
This thesis investigates the properties of bismuth (Bi) nanostructures on a fundamental level and in...
The key challenge for nanoelectronics technologies is to identify the designs that work on molecular...
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a s...
Quantum confinement in a semimetal thin film such as bismuth (Bi) can lead to a semimetal-to-semicon...
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a s...
Efforts to downscale transistor dimensions to satisfy the demands for ultra high density integrated...
This thesis explores several novel material systems and innovative device concepts enabled by nanowi...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Ferromagnetic thin-film structures separated by ultrathin dielectrics on the order of few nanometers...
Three-dimensional (3-D) topological insulators (TIs) are characterized by the presence of metallic s...
Miniaturisation of electronic devices has driven development of high speed, high density processors ...
textMiniaturization, continued scaling and cost reduction in microelectronic devices are goals bein...
Few layer bismuth nanofilms with (111) orientation have shown striking electronic properties, especi...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 2002.Includes bibliographic...
The structure of thin terminated Bi(1 1 1) films of approximately 1nm thickness is investigated from...
This thesis investigates the properties of bismuth (Bi) nanostructures on a fundamental level and in...
The key challenge for nanoelectronics technologies is to identify the designs that work on molecular...
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a s...
Quantum confinement in a semimetal thin film such as bismuth (Bi) can lead to a semimetal-to-semicon...
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a s...
Efforts to downscale transistor dimensions to satisfy the demands for ultra high density integrated...
This thesis explores several novel material systems and innovative device concepts enabled by nanowi...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Ferromagnetic thin-film structures separated by ultrathin dielectrics on the order of few nanometers...
Three-dimensional (3-D) topological insulators (TIs) are characterized by the presence of metallic s...
Miniaturisation of electronic devices has driven development of high speed, high density processors ...
textMiniaturization, continued scaling and cost reduction in microelectronic devices are goals bein...
Few layer bismuth nanofilms with (111) orientation have shown striking electronic properties, especi...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 2002.Includes bibliographic...