Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an automatic die pick and place machine, resulting in process times of just a few seconds. The combined parameters of sintering temperature 250 °C, sintering pressure 10 MPa and sintering time 5 s were selected as the benchmark process to attach 2 mm × 2 mm × 0.5 mm dummy Si devices. Then the effects of either the sintering temperature (240 to 300 °C), time (1 to 9 s) or pressure (6 to 25 MPa) on the porosity and shear strength of the sintered joints were investigated with 3 groups and a total of ...
Ag nanoparticle paste is prepared based on the polyol method and subsequent concentration by centrif...
International audienceAlong with the need to drastically limit the emission of greenhouse gases, the...
Abstract3mm×3mm dummy SiC dies with 100\200\200nm thick Ti\W\Au metallization have simultaneously be...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
This study focused on the time-reduced sintering process of nanosilver film and power cycling reliab...
This study investigates a time-reduced sintering process for die attachment, prepared, within a proc...
Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bo...
Recently, nanosilver pastes have emerged as one of the most promising high temperature bonding mater...
For decades soldering has been the technology of choice in die bonding. However, due to worldwide he...
Low-temperature joining with sintered silver is being developed as a lead-free, non-solder, die-atta...
This study investigates the power cycling reliability of nanosilver sintered joints formed by a time...
High power electronics with wide band gap semiconductors are becoming the most promising devices in ...
Modern power electronics has the increased demands in current density and high-temperature reliabili...
Power electronic systems are needed in diverse areas such as electricity transmission or electrical ...
Ag nanoparticle paste is prepared based on the polyol method and subsequent concentration by centrif...
International audienceAlong with the need to drastically limit the emission of greenhouse gases, the...
Abstract3mm×3mm dummy SiC dies with 100\200\200nm thick Ti\W\Au metallization have simultaneously be...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
This study focused on the time-reduced sintering process of nanosilver film and power cycling reliab...
This study investigates a time-reduced sintering process for die attachment, prepared, within a proc...
Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bo...
Recently, nanosilver pastes have emerged as one of the most promising high temperature bonding mater...
For decades soldering has been the technology of choice in die bonding. However, due to worldwide he...
Low-temperature joining with sintered silver is being developed as a lead-free, non-solder, die-atta...
This study investigates the power cycling reliability of nanosilver sintered joints formed by a time...
High power electronics with wide band gap semiconductors are becoming the most promising devices in ...
Modern power electronics has the increased demands in current density and high-temperature reliabili...
Power electronic systems are needed in diverse areas such as electricity transmission or electrical ...
Ag nanoparticle paste is prepared based on the polyol method and subsequent concentration by centrif...
International audienceAlong with the need to drastically limit the emission of greenhouse gases, the...
Abstract3mm×3mm dummy SiC dies with 100\200\200nm thick Ti\W\Au metallization have simultaneously be...